Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"Heterojunction Bipolar Transistor (HBT)"”.
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A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
… in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in …
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Monolithic electronic-photonic integration of the light-emitting transistor
… to intra-chip connection. The light-emitting transistor (LET) has good potential as an optical signal source for both applications because of its tilted charge dynamic mechanism in the base terminal, which enables fast optical recombination lifetime. In 2003, Holonyak and Feng discovered the …
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The design and fabrication of an inp-based transistor-injected quantum cascade laser
… control leave room for improvement. The transistor-injected quantum cascade laser (TI-QCL) presents a novel three-terminal QCL design that seeks to address these restrictions in order to provide a more practical and efficient solution to the MWIR and LWIR problem space. By placing the …
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An HBT magnetic sensor with integrated 3-dimensional magnetic structures
… on magnetic field sensors based on an InP/InGaAs heterojunction bipolar transistor (HBT) which has been fabricated to be compatible with high frequency epilayer structure and processes. In this work, the complete fabrication process for the HBT magnetic sensors has been developed, using standard, …
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Characteristics, Theory and Modeling of the Transistor Laser
The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties. These potentially lead to advantageous and useful …
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High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications
Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequency, and communication ICs because of their high speed, high breakdown voltage, and high efficiency capabilities compared with Si bipolar junction transistors (BJTs) and complementary metal-oxide …
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Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications
… circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to …