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Showing 1 to 20 of 21 for “"Hall measurements"”.
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Transport studies on CVD-grown graphene
… CVD-grown graphene. We perform resistivity and hall measurements on a large-area sample at 4' K. We measure the carrier mobility of the sample and find it to be on the order of 1000 cm2/Vs, whereas monolayer graphene regularly exhibits much higher mobilities. We also examine what we find to be …
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THERMAL CONDUCTIVITY OF THIN FILM NIOBIUM DISELENIDE FROM TEMPERATURE-DEPENDENT RAMAN
… at room temperature and we further verified by hall measurements that (NbSe2) conducts heat mostly through electrons. The results shed lights on the potential of Niobium diselenide as a thermoelectric device.
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Molecular beam epitaxial growth and characterization of indium antimonide on gallium arsenide
… electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and transmission measurements. The TEM study reveals pure edge-type, instead of the common 60$\sp\circ$-type, misfit dislocations at the InSb/GaAs interfaces. The reason for the formation of these misfit …
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A Study on the Nature of Anomalous Current Conduction in Gallium Nitride
… NH3, and Rf+ NH3, are examined with electrical measurements on NiIAu Schottky diodes and CAFM. Current-voltage (IV) mechanisms will identify conduction mechanisms on diodes, and CAFM measurements will investigate the microstructure of conduction in GaN thin films. With CAFM, enhanced conduction …
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Studies of InAs and GaAs layers prepared by molecular beam epitaxy
… using the van der Pauw technique and Hall measurements, Schottky barrier C-V profiling, photoluminescence analysis, X-ray diffraction, scanning electron microscopy, Rutherford backscattering and in-situ reflection medium energy electron diffraction. The GaAs:Si material was further …
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Diffusion and Electrical Properties of Sulfur Implanted in Gallium-Arsenide
… (SIMS) and differential resistivity and Hall measurements. Low dose (7 x 10('12) cm('-2), 250 keV) S implants exhibit redistribution behavior upon annealing which approximates gaussian diffusion. Diffusion coefficients estimated from the tails of annealed profiles are high: 9 x 10('-13) …
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Disorder and Doping in the Oxygenated Electron-doped Superconductor PCCO
… in this material using resistivity and Hall measurements. For various oxygen contents, I was able to determine that there is a separable doping and a disorder contribution to the superconducting transition temperature. I was able to quantitatively separate out these two effects and show …
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Optical Emission Spectroscopy during Sputter Deposition of CdTe Solar Cells and CuTe-Based Back Contacts
… (EDS), Scanning Electron Microscopy (SEM) and Hall measurements. At optimized deposition conditions for Cu<sub>2</sub>Te target sputtered films (2 nm thickness and 20 minutes annealing in vacuum) as determined from the thin-film properties, we sputtered this layer onto the back surface of the …
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Silicon molecular beam epitaxy
… defect etching, four-point probe and Hall measurements, electrochemical CV profiling. Auger electron surface analysis, transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS) analysis, spreading resistance measurement, and photoluminescence. The basic material …
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Highly Conductive Ultrananocrystalline Diamond Thin Films via Nitrogen Incorporation
… when nitrogen is introduced. Conductivity and Hall measurements indicate that these films have the highest n-type conductivity and carrier concentration demonstrated for diamond films to date. UNCD thin films typically consist of 2--5 nm grains of pure sp3-bonded carbon and atomically abrupt …
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Electronic transport in atomically thin layered materials
… quality monolayer and bilayer MoS 2 , performing Hall measurements and demonstrating the temperature dependence of the material's resistivity, mobility, and contact resistance. And we will present data on optoelectronic devices based on electrically tunable p-n diodes in monolayer WSe2 , …
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Single-step, Atmospheric Pressure Chemical Vapor Deposition of Methylammonium Bismuth Iodide Thin Films
… lead toxicity in these perovskites present a challenge to further scale-up and eventual commercialization. Recently, bismuth (Bi<sup>3+</sup>) based organic halide perovskite has drawn attention as a substitution for lead-free perovskites, since it is a non-toxic 6p-block element, isoelectronic …
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Photo-hall studies of compound semiconductors
… device applications. Temperature dependent photo-Hall effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy In0 . 53Ga0 . 47As. The major emphasis of this work involves the phenomenon of persistent photoconductivity. This phenomenon has been …
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Reconfigurable Photonics based on Broadband Low-loss Optical Phase Change Materials
… free carrier absorptions, as confirmed by Hall measurements. In-situ heating TEM and XRD measurements are carried out to confirm and understand the crystal structures of Ge₂Sb₂Se₄Te₁. We show that the optimized alloy, Ge₂Sb₂Se₄Te₁, combining broadband low loss (1 – 18.5 μm), large optical …
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Electrical injection and detection of spin polarization in InSb/ferromagnet nanostructures
… with different widths are calculated from Hall measurements in which the fringing fields of the CoFe electrodes are detected. A magnetic model provides reasonable estimation of the saturation magnetization for micrometer scale geometries. The interface magnetoresistance measurements of …
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CHARGE ORDER AND STRUCTURAL TRANSITION IN TOPOLOGICAL SEMIMETAL FAMILY AAL4
… but shows significant changes in resistivity, Hall and magnetic susceptibility measurements. This transition is extremely sensitive to disorder and can be suppressed completely by substituting 1$\%$ Ba nominally or using less pure Sr during crystal growth. Furthermore, magnetoresistance in this …
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Experimental consequences of mottness in high-temperature copper-oxide superconductors
… these compounds still remains one of the major challenges in condensed matter physics. In addition to the mechanism of superconductivity, understanding the properties of the normal state is a major puzzle in itself. As these materials are doped Mott insulators, the interaction between electrons …
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Lattice mismatched compound semiconductors and devices on silicon
… IIIV MOSFET channel mobility remain two major challenges for III-V MOSFETs. The purpose of this thesis is to solve or partially solve these challenges. To create large diameter III-V materials, the synthesis of high quality III-V compound semiconductors (lattice-matched to InP) on Si substrates …
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Growth and Characterization of (InxGa1-x)2O3, and NiO Heterostructures
… the bandgap of the alloy. This was confirmed by measurements of the electrical properties of the grown layers. Primarily, heteroepitaxial thin films of NiO, β-Ga2O3, and β-(InxGa1-x)2O3 were grown on insulating c-plane (0001) sapphire (α-Al2O3) and improved crystallinity was observed at high …
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The Hall Effect for Probing Conjugated Polymer Charge Transport in High Carrier Density Regimes
… in these materials often proves difficult. Hall effect mea- surements, a mainstay of semiconductor characterisation in more traditional materials, provide anomalous results when used on polymers. This often leads to inaccurate claims being made off the back of erroneously interpreted Hall …
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