Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 3 of 3 for “"Halbleiter-Heterostruktur"”.
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Spin-Bahn-Wechselwirkung in niedrigdimensionalen Al x Ga 1-x N/GaN-Elektronengasen
Spin-based electronics or magnetoelectronics (short spintronics) intends to use and control the electron spin in semiconductors for switching purpose. The two possible orientations of the electron spin respective to a defined direction in space make the spin to be an ideal bit for information …
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AlGaN/GaN MBE 2DEG heterostructures : interplay between surface-, interface- and device-properties
Due to their wide band gap and high bond strength, the III-N semiconductors can be used for violet, blue and green light emitting devices as well as for high temperature and high power transistors. In comparison to conventional AlGaAs/GaAs heterostructures the AlGaN/GaN material system offers new …
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New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
As a promising candidate for future microwave power devices, GaN-based high-electron mobility transistors (HEMTs) have attracted much research interest. However, group III-nitride growth related issues – predominantly the high defect densities due to lacking lattice matched substrates – limit the …