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Showing 1 to 1 of 1 for “"Hafnium zirconium oxide, ferroelectricity, X-ray diffraction, thin films"”.

  1. INVESTIGATION OF THE STRUCTURAL PROPERTIES OF HAFNIUM ZIRCONIUM OXIDE THIN FILMS

    Hafnium-zirconium oxide (HfxZr1-xO2)-based dielectrics have received an abundance of attention recently, holding promise for use in CMOS-compatible ferroelectric memory technology. Unlike in conventional ferroelectrics, ferroelectricity in HfxZr1-xO2 is retained in ultrathin films of only a few …

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