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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 10 of 10 for “"HVPE"”.
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Experimental and numerical aspects of GaN growth by HVPE
Contains fulltext : 29812.pdf (Publisher’s version ) (Open Access)
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Electronic properties of gallium nitride nanowires
… specifically hydride vapor phase epitaxy (HVPE) and chemical vapor deposition (CVD). TEM and XRD studies indicate that both of our HVPE and CVD grown GaN nanowires have the wurtzite single crystal structure. The crystal orientations along the wire axis are (1000) and (1010) for our HVPE and …
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CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES
… substrates by hydride vapor phase epitaxy (HVPE) and doped with different concentrations of iron, hydrogen, carbon, oxygen and silicon. The first step of characterization was measuring the optical absorption of all the samples using a UV-NIR fiber spectrometer. Through this procedure it was …
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The structure of trifolitoxin : A bacteriocin from Rhizobium leguminosarum biovar trifolii strain T24 / by Benjamin James Lethbridge.
… (FAB MS), high voltage paper electrophoresis (HVPE), enzymatic, Edman sequencing, amino acid analysis and hydrolyses techniques, trifolitoxin has been shown to consist of a linear peptide (MW=1037 (FAB MS)) (asp-ile-gly-gly-ser-(arg-X-gly)-cys-val-ala (Edman/partial hydrolysis)). It contains …
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Investigation of Surface States and Device Surface Charging in Nitride Materials Using Scanning Kelvin Probe Microscopy
… (MOCVD) and Hydride Vapor Phase Epitaxy (HVPE) typically show a high surface band bending of about 1 eV. In an n-type sample with 3X1017 cm-3 carrier concentration, 1 eV upward band bending corresponds to 1.7X1012 cm-2 trapped charge density in the surface states. Under continuous …
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Epitaxial Gallium Oxide Heterojunctions for Vertical Power Rectifiers
… from methods such as halide vapor phase epitaxy (HVPE) and metal organic chemical vapor deposition (MOCVD). This makes Ga2O3 a prime candidate for vertical power rectifiers as thick, high quality drift regions are a necessity for high voltage devices such as the PN diode, junction barrier Schottky …
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The activity of pH membrane disruptive pseudopeptides and their subcellular fate in mammalian cells cultured in-vitro
… (PAGE) and high voltage paper electrophoresis (HVPE) studies of the polydyes were conducted and provided evidence that that the Cy3 bisamine fluorophore was conjugated into the backbone of the polymer, poly (L-lysine iso-phthalamide). The subcellular fate of the fluorescentlylabelled "polydye" …
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Characterization of bio-hybrid interfaces under ambient conditions
… morphology, and chemistry of the surface of HVPE-grown n-GaN(0001) layers on c-sapphire/n-GaN(0001) samples were explored under various conditions before and after sputtering with 1 keV nitrogen N2 ions, followed by the functionalization with deionized water (H2O) and neutral L-cysteine …
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A Study on the Nature of Anomalous Current Conduction in Gallium Nitride
Current leakage in GaN thin films limits reliable device fabrication. A variety of Ga and N rich MBE GaN thin films grown by Rf, NH3, and Rf+ NH3, are examined with electrical measurements on NiIAu Schottky diodes and CAFM. Current-voltage (IV) mechanisms will identify conduction mechanisms on …
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UNDERSTANDING NURSES’ EXPERIENCES OF PROVIDING END-OF-LIFE CARE IN THE UNITED STATES HOSPITAL SETTING
Nurses perform a vital role in the care of dying patients and their families. Hence, experiences of nurses are a meaningful source from which to advance holistic end-of-life care. In this study, a hermeneutic phenomenological perspective was used to explore the phenomenon of end-of-life nursing …