Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 10 of 10 for “"HFETs"”.
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AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates
GaN-based HFETs demonstrate ubiquitous high power and high frequency performance and attract tremendous research efforts. Even though significant advances have been achieved, there still exist some critical issues needed to be investigated and solved. In particular, high defect densities due to …
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Polymer-Supported Bridges for Multi-Finger AlGaN/GaN Heterojunction Field Effect Transistors (HFETs)
… Heterojunction Field Effect Transistors (HFETs) make use of multiple sources, drains, and gates in parallel to maximize transconductance and effective gain while minimizing the current density through each channel. To connect the sources to a common ground, current practice prescribes the …
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Low Dislocation Density Gallium Nitride Templates and Their Device Applications
… templates, nearly lattice matched AlInN/AIN/GaN HFETs were successfully demonstrated and exhibited ∼ 1600 cm2/Vs and 17 600 cm2/Vs Hall mobilities at 300 K and 10 K, respectively. Those mobility values are much higher than literature reports and indicate that high quality HFETs can be realized in …
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Design, fabrication, and characterization of indium phosphide-based heterostructure field-effect transistors for high-power microwave applications
… heterostructure field effect transistors (HFETs) have, over the past several years, demonstrated microwave performance capabilities superior to those of GaAs-based and Si-based transistors. In particular, InGaAs/InAlAs modulation-doped field effect transistors (MODFETs) have exhibited …
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High-Speed Indium Gallium Phosphide/indium Gallium Arsenide/indium Phosphide Doped-Channel HFETs and Implanted Gallium Arsenide Enchancement/depletion-Mode MESFETs Technology With an f(T) Over 130 GHz
Direct ion-implanted GaAs MESFET has become the primary workhorse for high-speed and millimeter-wave wireless applications due to its high performance-cost ratio. A simple low-temperature T-gate process using a novel implantation schedule for high-performance direct ion-implanted GaAs …
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AlGaN/GaN HFET with composite 'slow/fast' gate
… Radio Frequency (RF) switches based on such HFETs demonstrate very low insertion loss, high power handling capability and broad range of operating temperatures. </p> <p>However, the maximum operating frequency of these switches is limited by the finite off state capacitance COFF, mainly due …
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Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors
The fabrication of AlGaN/GaN HFETs entailed first developing fundamental processing techniques such as isolation etching, low-resistance drain/source ohmic contacts, and Schottky gate formation. These efforts along with related processing issues will be discussed. Devices were then fabricated on …
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GaN heterojunction FET device Fabrication, Characterization and Modeling
… Heterojunction Field Effect Transistors (HFETs). The interest in investigating GaN HFETs is motivated by the advantageous material properties of nitride semiconductor such as large band gap, large breakdown voltage, and high saturation velocity, which make it very promising for the high …
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Wide Bandwidth Control Electronics For Gan-Based Pebbs
… gate drive circuit for GaN power HFETs. After this topology was verified to be feasible, an integrated circuit (IC) for the drive circuit was designed and fabricated. This driver IC facilitates the application of the GaN devices in power electronics, improves the property of the …
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Novel RTD-Based Threshold Logic Design and Verification
… heterostructure field-effect transistors (HFETs) in conjunction with RTDs to modulate effective negative differential resistance (NDR). However, RTDs are intrinsically suitable for implementing threshold logic rather than Boolean logic which has dominated CMOS technology in the past. To …