Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 10 of 10 for “"HFET"”.
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AlGaN/GaN HFET with composite 'slow/fast' gate
… heterojunction field effect transistors (HFET) include a record high-density two dimensional electron gas (2DEG) channel, high breakdown fields, temperature stability and chemical robustness. Radio Frequency (RF) switches based on such HFETs demonstrate very low insertion loss, high power …
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GaN heterojunction FET device Fabrication, Characterization and Modeling
… Heterojunction Field Effect Transistors (HFETs). The interest in investigating GaN HFETs is motivated by the advantageous material properties of nitride semiconductor such as large band gap, large breakdown voltage, and high saturation velocity, which make it very promising for the high …
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Investigation of Surface States and Device Surface Charging in Nitride Materials Using Scanning Kelvin Probe Microscopy
… Hetero-junction Field Effect Transistor (HFET) show an increase of band bending near the Schottky contact edge. For an applied reverse bias of 4 V, about 0.5 eV increase of band bending was observed. This increase of band bending was caused by tunneling of electrons from the Schottky …
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High-Performance Gateless Iii-Nitride Microwave Switches
… heterostructure field-effect transistors (HFET) have led to RF switches with outstandingly low loss and high power handling capability, ideal for numerous applications. However, relatively high ohmic contact resistivity, large OFF-state capacitance, and difficulty in gate alignment limit …
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Low Dislocation Density Gallium Nitride Templates and Their Device Applications
… for heterojunction field effect transistor (HFET) applications due to degenerate GaN:Si layer which serves as parallel conduction channel. This dissertation discusses the growth of low dislocation density GaN templates, by using the in situ SiNx nanonetwork for conductive templates, and the …
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Novel RTD-Based Threshold Logic Design and Verification
… heterostructure field-effect transistors (HFETs) in conjunction with RTDs to modulate effective negative differential resistance (NDR). However, RTDs are intrinsically suitable for implementing threshold logic rather than Boolean logic which has dominated CMOS technology in the past. To …
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AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates
GaN-based HFETs demonstrate ubiquitous high power and high frequency performance and attract tremendous research efforts. Even though significant advances have been achieved, there still exist some critical issues needed to be investigated and solved. In particular, high defect densities due to …
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Wide Bandwidth Control Electronics For Gan-Based Pebbs
… the design of a gate drive circuit for GaN power HFET devices. This dissertation introduces the design of a high-speed, highly-efficient gate drive circuit for GaN power HFETs. After this topology was verified to be feasible, an integrated circuit (IC) for the drive circuit was designed and …
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Third Order Nonlinearity In III-Nitride Microwave Switches
… Heterojunction Field Effect Transistor (HFET) microwave switches have demonstrated significant advantages over most other switch types including pin- diodes GaAs high electron mobility transistors (HEMT) and MEMS due to high breakdown, very low insertion loss, higher isolation, high …
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Microcantilever Based Potentiometric Sensors For Harsh Environment Applications
… potentiometric sensor with embedded AlGaN/GaN HFET was designed and fabricated targeting harsh environment operation. The piezoresistive and piezoelectric properties of AlGaN/GaN heterostructure is highly attractive for harsh environment applications of microelectromechanical systems (MEMS) …