Global ETD Search
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Showing 1 to 11 of 11 for “"HFAC"”.
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Chemical vapor deposition of thin films for ULSI interconnect metallization
… metallization using solution delivery of Cu(hfac)2 (Cu(II) hexafluoroacetyl-acetonate) dissolved in isopropanol. We observe a growth rate of 17.7 „b 1.5 nm/min at reference conditions of 300„aC substrate temperature, 0.025 Torr Cu(hfac)2 partial pressure, 1.6 Torr isopropanol (reducing …
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Precursors for copper chemical vapor deposition
… In chapter 2, we synthesized a series of Cu(hfac)<sub>2</sub>(amine) adducts, where hfac<sup>-</sup> is hexafluoroacetylacetonate and the amines are: dimethylamine, isopropylamine, allylamine, pyrrolidine, and piperidine. The efficiency of these adducts compared to …
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Surface chemistry of metal oxide materials: from metalorganic and organic reactions to gas sensing
… vinyl trimethyl silane, Cu(hfac)(VTMS), to grow copper nanoparticles on commercial ZnO powder. This deposition process is investigated by high-vacuum Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy …
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The Effects of Temperature and Reactive Environments on Metal Particle Sintering and Redispersion
… that had been sintered after exposures with Hfac at an elevated temperature. A similar process has never been observed previously. These results suggest the possible future use of Hfac or similar diketones to control redispersion of platinum supported catalysts.
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Synthesis, antimicrobial activity, and catalytic activity of rhodium and iridium piano stool complexes: Teaching an old dog new tricks
… ligand: 1,1,1,5,5,5-hexafluoroacetylacetonate (hfac). Though many metal complexes of this ligand are known, reaction with [Cp*MCl2]2 did not yield the desired Cp*M(hfac)Cl complexes. Instead, a variety of products were obtained, three of which were characterized crystallographically. The most …
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Characterization of the high frequency alternating current block in the rat sciatic nerve using cuff electrodes and macro-sieve electrodes
… using both the macro-sieve electrodes for the HFAC block – proximal macro-sieve as anode and distal macro-sieve as cathode. Finite element modelling and axon modelling was done to determine the optimal parameters for effecting a high frequency block in the nerve. </p>
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Deposition of p-type metal oxide semiconductors for large-area electronic display and solar cell applications
… focus turned to an alternative precursor (Cu(hfac)(tmvs)) and the successful deposition of p-type Cu₂O using PECVD has been demonstrated, with films exhibiting a Hall mobility of 1.48 cm²(Vs)⁻¹, resistivity of 1.92×10⁵ Ωcm and carrier concentration of 3.09×10¹³ cm⁻³. The significance of the …
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Co-reactant interactions with CVD surfaces: Activation or passivation of growth
… For the CVD of copper from the precursor Cu(hfac)VTMS, we demonstrate that the magnitude of the rate inhibition by VTMS is much larger on other surfaces and can be used to afford essentially perfect selectivity: there is rapid growth of Cu on RuO2 but essentially no growth on thermal SiO2 or …
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Ligand design for molecule-based magnetic and/or conducting materials
… coordination chemistries of these ligands with M(hfac)2.H2O (M( = Co, Ni, Mn, Cu) have been explored and the structural and magnetic properties of these complexes are described.
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Role of growth inhibitors in nucleation and growth of thin film deposited by chemical vapor deposition in high aspect ratio structures
… to uniformly islanded. The precursor is Cu(hfac)VTMS and the inhibitor is additional VTMS. Interestingly, this system is very distinct from that of HfB2: the use of the inhibitor during nucleation creates a uniform dispersion of Cu islands. This is interpreted in terms of a large inhibitor …
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Coating and filling of nanometer-scale structures using chemical vapor deposition
… effect, I use a molecular growth inhibitor, H(hfac) or H(acac), to reduce the growth rate near to the opening. The result is seam-free filling of trenches with HfO2 up to an AR of 10. I also report CVD of highly conformal MgO film at a high growth rate (up to 300 nm/min) and a low substrate …