Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 107 for “"HEMTs"”.
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Hydrogen degradation on InP HEMTs
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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Power limiting mechanisms in InP HEMTs
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Characterization of pGaN-gate power HEMTs
… gate GaN High Electron Mobility Transistors (HEMTs) with a focus on understanding how fabrication process variations and gate structural designs impact key electrical performance metrics. Five industry-fabricated wafers, each processed with distinct etch depths, contact strategies, and p-GaN …
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Fabrication and characterization of AIGaN/GaN HEMTs
… for fabrication of high power, high frequency HEMTs has been designed. A new epilayer design was developed to achieve a multi-channel AlGaN/GaN HEMT using piezoelectric polarization effect. Simulation showed better dc performances than HEMTs with conventional design.
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Development of InAlN HEMTs for space application
… processes and device performance of InAlN HEMTs were compared to AlGaN HEMTs, also produced as part of this work. RF gain up to 4 GHz was demonstrated in both InAlN and AlGaN HEMTs with gate lengths of 1 μm, with InAlN HEMTs generally showing higher channel currents (~150 c.f. 60 mA/mm) but …
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Thermally Hardened RF GaN HEMTs in Extreme Environments
… (GaN) high electron mobility transistors (HEMTs) are especially well suited for high temperature electronic applications due to their low intrinsic carrier concentration and excellent electrical properties. Despite great progress in HT GaN technology, most demonstrations target logic or …
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The hydrogen-induced piezoelectric effect in InP HEMTs
Hydrogen exposure of III-V HEMTs has been shown to cause a threshold voltage shift, [delta] V[sub]T. This is a serious reliability concern. This effect has been attributed to a H-induced piezoelectric effect. Formation of TiH[sub]x expands the Ti layer in the gate, causing mechanical stress in the …
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InAlAs/InGaAs/InP HEMTs with pseudomorphic Schottky barriers
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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Multiphysics characterization of GaN HEMTs via micro-Raman spectroscopy
… (GaN) high electron mobility transistors (HEMTs), which can operate at significantly higher voltages, current densities, and power densities than Si-based field effect transistors of the same size. However, these more strenuous operating conditions combined with the desire to operate GaN …
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EFFECTS OF STRUCTURAL MODIFICATION ON RELIABILITY OF NANOSCALE NITRIDE HEMTs
… nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. …
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A ballistic transport model for HEMTs and III-V MOSFETs
… High-electron mobility transistors, or HEMTs, are III-V Quantum-Well FETs that we can use to explore many issues of relevance to future III-V MOSFETs. HEMTs are worthwhile transistors in their own right, but are also simpler than III-V MOSFETs and therefore allow a more thorough …
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Dynamics of the kink effect in InAlAs/InGaAs/InP HEMTs
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Near junction thermal management of GaN HEMTs via wafer bonding
… (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore critical for …
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Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress
… (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance …
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GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications
… of High Electron Mobility Transistors (HEMTs) and Schottky barrier diodes with superior performance, even when compared to devices based on state-of-the-art technologies such as Silicon Carbide or superjunctions. Furthermore, epitaxial growth of GaN layers on silicon wafers allows a …
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Highly Scaled p-GaN-gate HEMTs for Low Voltage Power Electronics
… of p-GaN-gate highelectron-mobility transistors (HEMTs). A p-GaN-gate epitaxial structure was developed with considerations for short channel effects. A self-aligned, gate-first process employing tungsten metallization was implemented to enable gate lengths as small as 100 nm. Device scaling was …
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Gallium Nitride-Based HEMTs for Microwave Power and Noise: Physics and Application
AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising high speed performance, both high microwave power and low microwave noise. In this dissertation, the millimeter-wave and microwave power performance and small signal and low noise microwave characteristics are investigated. …
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Process Development for Aluminum Gallium Nitride-Based Enhancement- and Depletion -Mode HEMTs
… development of high-performance gate-recessed HEMTs in the AlGaN-GaN material system. The primary goal of the dissertation research is the development of processes that are suitable for fabrication of AlGaN/GaN HEMTs with precise threshold voltage control for both enhancement- and …
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Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs
AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high power and high frequency applications. However, the poor long term …
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Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS)
… to AlGaN/GaN high electron mobility transistors (HEMTs) was developed. Non-alloyed ohmic contacts with very low contact resistances of 0.2 - 0.24 -mm were achieved with TLM pads fabricated using the Mo/Al/Mo/Au metallization. Simulations were carried out with SRIM to qualify the implantation …
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