NDLTD logo NDLTD Union Catalog and Global ETD Search

Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 3 of 3 for “"HEMT, high-electron-mobility transistor"”.

  1. AlGaN/GaN MBE 2DEG heterostructures : interplay between surface-, interface- and device-properties

    Kocan, MartinPublikationsserver der RWTH Aachen University2003

    Due to their wide band gap and high bond strength, the III-N semiconductors can be used for violet, blue and green light emitting devices as well as for high temperature and high power transistors. In comparison to conventional AlGaAs/GaAs heterostructures the AlGaN/GaN material system offers new …

    aachen Repository record

  2. MOVPE and characterization of GaN-based structures on alternative substrates

    Dikme, YilmazPublikationsserver der RWTH Aachen University2006

    … based on the AlInGaN material system offer high chemical and thermal stability and bandgaps between 0.8 eV and 6.2 eV. They are suited for high frequency and high power devices as well as for light emitting diodes, which currently cover the ultra violet to green spectral region. In …

    aachen Repository record

  3. Pseudomorphic and metamorphic HEMT-technologies for industrial W-band low-noise and power applications

    Grünenpütt, Jan ErikUniversität Ulm

    ulm-diss Repository record