Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 37 for “"HBTs"”.
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Linearity of power AlGaAs/GaAs HBTs
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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DC and AC modeling of heterostructure bipolar transistors (HBTS)
… graded and abrupt, single and double AlGaAs/GaAs HBTs. The results are in good agreement with the reported data.
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Reliability of SiGe HBTs for extreme environment and RF applications
… (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments. The degradation of SiGe HBTs due to mixed-mode DC and RF stress has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs were first characterized, and then DC and RF …
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A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
… BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from both a device and circuits perspective.
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Zuverlässigkeitsuntersuchung von GaAs Heteroübergang-Bipolartransistoren
… frequenz-GaAs-Heteroübergang-Bipolartransistoren (HBTs), die am Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH) für Anwendungen mit hohen Zuverlässigkeitsanforderungen (Mobilfunk, Weltraum) hergestellt wurden, untersucht. Die Lebensdaueruntersuchungen erfolgten parallel zur …
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High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications
Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequency, and communication ICs because of their high speed, high breakdown voltage, and high efficiency capabilities compared with Si bipolar junction transistors (BJTs) and complementary metal-oxide …
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Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization
… proposed work is to study the behavior of SiGe HBTs at cryogenic temperatures and its relation to device scaling and optimization. Not only is cryogenic operation of these devices required by space missions, but characterizing their cryogenic behavior also helps to investigate the performance …
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Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments
… robustness in extreme environments is SiGe HBTs. SiGe HBTs have shown superior performance at low temperatures and are multi-Mrad tolerant to total dose effects. However, a type of extreme environment not often looked at in the context of SiGe HBTs is high temperature and its intersection …
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High-Performance Indium Gallium Phosphide/gallium Arsenide Heterojunction Bipolar Transistors
To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and …
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Submicron Scaling in Indium Phosphide/indium Gallium Arsenide Single Heterojunction Bipolar Transistors
Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. Important scaling phenomena that emerge as the emitter width is scaled to the deep submicron regime were identified and analyzed. A unique …
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InP/InGaAs Heterojunction Bipolar Transistors and Field-Effect Transistors Grown by Gas -Source Molecular Beam Epitaxy
… and its effects on dc properties of InGaAs/InP HBTs have been studied. The degradation of the junction properties and current gain-base sheet resistance ratio can be attributed to the formation of C precipitates. These findings are important for improving the reliability of C-doped InP/InGaAs …
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Modeling and Characterization of Heterojunction Bipolar Transistors
Heterojunction bipolar transistor (HBTs) offer several advantages over their homo-junction counterparts resulting from the use of semiconductors in the emitter and base with different bandgaps. These advantages include high current gain, large cut-off frequency and short gate delay in digital logic …
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An investigation of heterojunction bipolar transistors by molecular beam epitaxy
… modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and high-speed digital applications. This thesis details the performance …
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Development of Asymmetric Fabry -Perot Modulators and Power HBT Circuits for High-Speed Applications
… identify the limitation of DC performance of GaN HBTs, the CE IC-VCE modulation curves in AlGaN/GaN graded emitter HBTs at low temperature was studied in order to understand the limiting issues related to the low CE current gain of a GaN HBT. We have measured a CE current gain of 31.0 at 175 K and …
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Carbon doping and hydrogen passivation in indium gallium arsenide and indium phosphide/indium gallium arsenide heterojunction bipolar transistors grown by metalorganic chemical vapor deposition
… Zn prevent the use of MOCVD for growth of stable HBTs. This thesis describes recent work on carbon doping of GaAs, InGaAs, and InP, with emphasis placed on issues related to the use of C as the base dopant in InP/InGaAs HBTs.
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Submicron Scaling of Indium Phosphide/indium Gallium Arsenide Heterojunction Bipolar Transistors Toward Terahertz Bandwidths
This work extends the operating speed of InP HBTs to frequencies of fT = 604 GHz though aggressive delay reductions and advanced fabrication processes. Delay reduction is employed by a combination of vertical scaling, lateral scaling, and epitaxial engineering to reduce the transit and charging …
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Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy
… (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and p-type FETs, respectively. Both compounds were grown …
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Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments
… silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie …
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Low-Pressure Metalorganic Chemical Vapor Deposition of High-Gain InGaP/GaAs Heterojunction Bipolar Transistors
… the gain of heterojunction bipolar transistors (HBTs) was studied by annealing to simulate the prolonged growth of HBTs with a heavily carbon-doped base. The results indicate that postgrowth annealing at a temperature close to the growth temperature of the device causes both hydrogen removal from …
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Zero-field time-of-flight characterization of minority carrier transport in heavily carbon-doped gallium arsenide and indium gallium arsenide
… InGaP/GaAs heterojunction bipolar transistors (HBTs) due to its high solubility and low diffusivity in GaAs. The low diffusivity of carbon, relative to that of Be and Zn, has been demonstrated to lead to improvements in the stability of the base dopant profile and in AlGaAs/GaAs HBT reliability. …
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