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Showing 1 to 3 of 3 for “"Group-III-nitride semiconductors"”.
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OPTICAL CHARACTERIZATION OF WIDE ENERGY AGP GROUP III-NITRIDE SEMICONDUCTORS
… of the optical characterization of wide-band gap group III nitrides. Several optical spectroscopic techniques were applied to GaN and related materials grown by metalorganic chemical vapor deposition (MOCVD). Variable-temperature photoluminescence (PL) spectra were measured for a series of undoped …
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Ion-beam processes in group-III nitrides
Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these …
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Ion-beam processes in group-III nitrides
Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these …