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Showing 1 to 12 of 12 for “"Group-III nitride"”.
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Group III-nitride devices and applications
The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and …
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OPTICAL CHARACTERIZATION OF WIDE ENERGY AGP GROUP III-NITRIDE SEMICONDUCTORS
… of the optical characterization of wide-band gap group III nitrides. Several optical spectroscopic techniques were applied to GaN and related materials grown by metalorganic chemical vapor deposition (MOCVD). Variable-temperature photoluminescence (PL) spectra were measured for a series of undoped …
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Reaction and transport processes in OMCVD : selective and group III-nitride growth
… (OMCVD) to fabricate thin films of the group III nitride materials (GaN, AIN, and InN), LEDs with lifetimes over 10,000 hours are now commercially available while rapid progress is being made towards a laser diode structure with a similar lifetime. These devices, coupled with the …
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Investigation on the Properties of Nanowire Structures and Hillocks of Group-III Nitride Materials
Group-III nitride materials are increasingly important, because of their semiconducting properties and bandgaps tuneable across a wide range from the infrared to ultraviolet. They are of particular interest for optoelectronic and power electronic applications. The studies on nitride materials are …
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Dynamical models for novel diffraction techniques in SEM
… (TDs) normal to the surface in wurtzite group-III nitride materials. I also introduce and use the notion of ECC-strain to study crystal features and to predict the behaviour of TDs contrast.For the electron back(/forward)scatter modality, I show the first application of the new …
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Investigations of the gallium nitride, aluminum nitride and indium nitride semiconductors: Structural, optical, electronic and interfacial properties
… properties of both zincblende and wurtzite Group III - Nitride wide bandgap semiconductor materials. All of the thin films studied were grown by plasma-enhanced molecular beam epitaxy on either GaAs and SiC substrates. This growth method proved to be suitable for nitride expitaxial growth …
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Ion-beam processes in group-III nitrides
Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these …
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Ion-beam processes in group-III nitrides
Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these …
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III-nitride nanowire light-emitting diodes: design and characterization
III-nitride semiconductors have been intensively studied for optoelectronic devices, due to the superb advantages offered by this materials system. The direct energy bandgap III-nitride semiconductors can absorb or emit light efficiently over a broad spectrum, ranging from 0.65 eV (InN) to 6.4 eV …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
The study of III-nitride materials (InN, GaN and AlN) gained huge research momentum after breakthroughs in the production light emitting diodes (LEDs) and laser diodes (LDs) over the past two decades. Last year, the Nobel Prize in Physics was awarded jointly to Isamu Akasaki, Hiroshi Amano and …
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Synchrotron radiation-based characterization of GaN- based MQW structures and strongly correlated materials
… techniques to the fields of gallium nitrides, multiferroic manganites, and self-assembled nano-domain oxide films. These material systems were chosen due to their unusual properties and potential device applications, which have made them very attractive to the scientific community. …
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Aspectos estructurales, deformación y superficies en relación con la fiabilidad de transistores de alta movilidad electrónica basados en heteroestructuras de AlGaN/GaN
… fiabilidad, en el caso de los nitruros del grupo III. En este sentido, se presenta una caracterización estructural, eléctrica y de la superficie, amplia y detallada, en múltiples heteroestructuras de AlGaN/GaN crecidas sobre sustratos diferentes (SiC, zafiro y silicio) por técnicas de crecimiento …