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Showing 1 to 4 of 4 for “"Group III-Nitride Materials"”.
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Investigation on the Properties of Nanowire Structures and Hillocks of Group-III Nitride Materials
Group-III nitride materials are increasingly important, because of their semiconducting properties and bandgaps tuneable across a wide range from the infrared to ultraviolet. They are of particular interest for optoelectronic and power electronic applications. The studies on nitride materials are …
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Dynamical models for novel diffraction techniques in SEM
… nanocharacterisation tool for a variety of materials including semiconductors and metals. Less known for its diffraction abilities than its transmission counterpart, scanning electron microscopy (SEM)can be used in a number of diffraction modalities to provide information on crystal …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
The study of III-nitride materials (InN, GaN and AlN) gained huge research momentum after breakthroughs in the production light emitting diodes (LEDs) and laser diodes (LDs) over the past two decades. Last year, the Nobel Prize in Physics was awarded jointly to Isamu Akasaki, Hiroshi Amano and …
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Reaction and transport processes in OMCVD : selective and group III-nitride growth
… (OMCVD) to fabricate thin films of the group III nitride materials (GaN, AIN, and InN), LEDs with lifetimes over 10,000 hours are now commercially available while rapid progress is being made towards a laser diode structure with a similar lifetime. These devices, coupled with the …