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Showing 1 to 6 of 6 for “"Graphene nano-ribbon"”.

  1. Graphene nano-ribbon and transition metal dichalcogenide field-effect transistor modeling and circuit simulation

    … presents a modeling and simulation study of graphene nano-ribbon and transition metal dichalcogenide field-effect transistors. Through compact modeling, SPICE implementation of the transistors is realized, and circuit-level simulation is enabled. Extensive simulation studies are performed to …

    uiuc Repository record for Graphene nano-ribbon and transition metal dichalcogenide field-effect transistor modeling and circuit simulation (opens in a new tab)

  2. Evaluating the effect of process variation on silicon and graphene nano-ribbon based circuits

    Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2012-04-21T15:49:15Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Rogachev_Artem.docx: 719809 bytes, checksum: a5e99a79e062ca8794a0646df6052ac8 (MD5) Rogachev_Artem.pdf: 1216501 bytes, …

    uiuc Repository record for Evaluating the effect of process variation on silicon and graphene nano-ribbon based circuits (opens in a new tab)

  3. Circuit level delay and power analysis of graphene nano-ribbon field-effect transistors using monte carlo simulations and standard cell library characterization

    Graphene nano-ribbon (GNR) transistors have emerged as a promising candidate to replace traditional silicon transistors in future scaled technologies. Since these devices are very small, the impact of process variation on the circuit’s performance is very large. In this work, we study the impact of …

    uiuc Repository record for Circuit level delay and power analysis of graphene nano-ribbon field-effect transistors using monte carlo simulations and standard cell library characterization (opens in a new tab)

  4. Technological Solution beyond MOSFET and Binary Logic Device

    … application for beyond MOSFET technologies. Graphene Nano Ribbon, due to its high-carrier mobility, tunable bandgap and its outstanding electrostatic control of device gate becomes ideal choice for channel material of TFET. This paper proposes double gated ultra-thin body (UTB) TFET device …

    umkc Repository record for Technological Solution beyond MOSFET and Binary Logic Device (opens in a new tab)

  5. Quantum transport and bulk calculations for graphene-based devices

    As devise sizes approach the nanoscale, novel device geometries and materials are considered, and new types of essential physics becomes important and new physical switching mechanism are considered, and as our intuitive understanding of device behavior is stretched accordingly, increasing …

    texas Repository record for Quantum transport and bulk calculations for graphene-based devices (opens in a new tab)

  6. Computational modeling of intrinsic dissipation in nano-structure

    … different mechanisms of intrinsic dissipation in nano-electro mechanical systems (NEMS). We, first, use molecular dynamics (MD) simulation and gain an understanding of the underlying loss mechanisms. Using insights from the MD simulation, a multi-scale method to model intrinsic damping is …

    uiuc Repository record for Computational modeling of intrinsic dissipation in nano-structure (opens in a new tab)