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Showing 1 to 5 of 5 for “"Gilbert cell"”.

  1. Design of CMOS Four-Quadrant Gilbert Cell Multiplier Circuits in Weak and Moderate Inversion

    … multiplier architectures based on the bipolar Gilbert cell multiplier architecture. Multipliers are designed using the CMOS subthreshold region to take advantage of the subthreshold exponential I-V relationship that closely matches bipolar modeling. It is discovered that biasing to remove drift …

    byu Repository record for Design of CMOS Four-Quadrant Gilbert Cell Multiplier Circuits in Weak and Moderate Inversion (opens in a new tab)

  2. Advanced Downconversion Mixers for CMOS Radio Frequency Integrated Circuits

    … As it generates the low-frequency IM3 for the cancellation fully in the IF band, the technique can bring third-order input intercept point (IIP3) of the mixer that is robust against parasitic parameters and process variations. Furthermore, this method can be applied to any active mixers regardless …

    queens Repository record for Advanced Downconversion Mixers for CMOS Radio Frequency Integrated Circuits (opens in a new tab)

  3. V-band low noise amplifier and mixer design using 90 nm CMOS technology

    … low noise amplifier and a fully differential Gilbert cell with resonating current bleeding network have been chosen for being part of the WiONet system. Both circuits showed state of the art performance in terms of gain, linearity, noise and power consumption. Furthermore, they fulfil the …

    tu-berlin Repository record for V-band low noise amplifier and mixer design using 90 nm CMOS technology (opens in a new tab)

  4. Low-Power RF Front-End Design for Wireless Body Area Networks

    … isolation. The up-conversion mixer is based on a Gilbert cell with resistive loads. Simulation results and performance comparisons for each designed building block are presented. Finally, we present a case study on a direct VCO modulation transmitter and a super-regenerative receiver, which can …

    vt Repository record for Low-Power RF Front-End Design for Wireless Body Area Networks (opens in a new tab)

  5. 5-6 GHz RFIC Front-End Components in Silicon Germanium HBT Technology

    … In addition, SiGe BiCMOS processes offer excellent high frequency performance through the use of SiGe heterojunction bipolar transistors (HBTs), while coexisting Si CMOS offers compatibility with digital circuitry for high level 'system-on-a-chip' integration. The work presented in this …

    vt Repository record for 5-6 GHz RFIC Front-End Components in Silicon Germanium HBT Technology (opens in a new tab)