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Showing 1 to 1 of 1 for “"Germanium crystals--Growth."”.
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Selective epitaxial growth techniques to integrate high-quality germanium on silicon
… reveal dislocations, with SiO2 and subsequent Ge growth over SiO2. The filling prevents dislocations in the lower Ge layer from propagating into the upper Ge layer. The third method reduces the defect density from 2.8 108 cm-2 to 9.1 ' 106 cm-2, and is proven to be the most effective at reducing …