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Showing 1 to 10 of 10 for “"Germanium Tin"”.
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Germanium tin nanowires: synergy at the nanoscale
… as in III-V materials, but with the distinct advantage over III-Vs of being Si compatible. A direct bandgap group IV semiconductor would be beneficial for the development of mid-IR optoelectronic devices such as photodetectors. However, due to the lattice mismatch between Ge and Sn, …
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Theory of the electronic and optical properties of germanium-tin alloys
The elemental group-IV materials silicon (Si) and germanium (Ge) see widespread use in conventional microelectronic and have been used to develop a wide range of passive photonic components. The presence of a fundamental indirect gap in both Si and Ge however, severely limits these materials …
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Si-based Germanium-Tin (GeSn) Emitters for Short-Wave Infrared Optoelectronics
… circuits. The indirect bandgap of silicon and germanium is a bottleneck for the further development of photonic and optoelectronic integrated circuits.</p> <p>The Ge1-xSnx alloy, a group IV material system compatible with Si CMOS technology, was suggested as a desirable material that …
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Si-based Germanium Tin Photodetectors for Short-Wave and Mid-Wave Infrared Detections
… several group IV materials such as silicon and germanium are used to realize detectors in the visible and near infrared region, they are not the efficient approach for imaging system in the short-wave infrared detection range and beyond due to bandgap limit. On the other hand, this market is …
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Optical and electrical properties of narrow gap germanium-tin alloys with high tin contents for middle and far infrared applications
Germanium-Tin (GeSn) alloys have received considerable attention because of the interesting electronic properties they possess. The offer a potential route to a direct bandgap group IV semiconductor that is isoelectronic with silicon and can be fully integrated into current silicon manufacturing …
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Tunneling Field-Effect Transistors for Low Power Logic: Design, Simulation and Technology Demonstration
… the device performance. New substrate material germanium-tin (GeSn), which has small bandgap, was explored for TFET application and GeSn p-channel TFETs is realized for the first time. Descent electrical characteristic was achieved.
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Defects and alloying in semiconductors: computational studies of clusters and surfaces
… nontoxicity. Alloy nanoclusters, specifically germanium-tin (GeSn) nanoclusters show great promise for achieving higher photoconversion efficiencies since the band gap can be tuned by adjusting the Ge/Sn ratio. To accurately model alloy nanoclusters one must first verify that the physical …
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Theoretical study of nanocrystals and other functional nanostructures of silicon and alternative group - 14 elements
… of C, Si, Ge, and Sn. c) Ultrafine silicon and germanium nanowires of various growth patterns. The majority of this work is based in density functional theory (DFT), both ground state and time-depended, using in most cases the hybrid functional of Becke, Lee, Parr and Yang (B3LYP), and in …
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Doping of group IV semiconductor nanowires
… the atomic composition of the NWs. Electrical testing was also carried out on the NWs. Chapter 1 of this thesis outlines the advantages of the Ge and GeSn NWs over conventional FET materials and architectures, as well as introducing the mechanisms of the growth and doping of semiconductor NWs and …
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GeSn Light-Emitting Devices
… of Si and Ge, developing of efficient light-emitting source on Si is still a challenging topic. GeSn based optoelectronic devices have the great potential to overcome this deficiency for several reasons. By adding more fraction of Sn into Ge, GeSn band gap could be reduced. The narrowed band gap …