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Showing 1 to 20 of 29 for “"Germanium (Ge)"”.
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Dirac R-matrix scattering calculations in support of plasma diagnostics
… ionised tungsten (W II) and doubly ionised germanium (Ge III) are thoroughly analysed and subsequently incorporated into scattering calculations. W II is needed to ensure reliable erosion diagnostics when investigating the influx of impurities into magnetically confined fusion plasmas. The …
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Propriétés mécaniques du Ge poreux reconstruit en tant que couche de séparation pour le détachement d'hétérostructures épitaxiales : simulation et expérience
Le processus PEELER (Porous germanium Efficient Epitaxial LayEr Release) est l’une des approches les plus prometteuses permettant de réduire la masse et les coûts de production des dispositifs optoélectroniques à base de germanium (Ge). Dans ce contexte, les propriétés morphologiques et mécaniques …
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Low-Temperature Germanium Waveguides for Mid-Infrared Sensing Applications
… in the mid-infrared (mid-IR) wavelength range (2.5-12 µm) are used for sensing the fundamental absorption bands in a variety of molecules. Germanium (Ge) is commonly used for photodetection in the nearinfrared (near-IR) wavelength range of 1.2-1.6 µm due to its strong absorption from a 0.8 …
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Alternative gate dielectrics and application in nanocrystal memory
… Flash memory. In this work, the performance of germanium (Ge) nanocrystal memory structures, employing high dielectric constant (high-k) materials to replace the tunnel oxide and capping oxide (control oxide) layers, was investigated. It was found that faster charging rate and better charge …
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Germanium-rich silicon-germanium materials for field-effect modular application
… presents a study of the Franz-Keldysh effect in germanium (Ge) layers epitaxially grown on Si substrates, by using free-space spectral responsivity measurement. Generalized Franz-Keldysh formalism and separately measured Ge material constants were used to calculate theoretical results, which were …
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Theory of the electronic and optical properties of germanium-tin alloys
The elemental group-IV materials silicon (Si) and germanium (Ge) see widespread use in conventional microelectronic and have been used to develop a wide range of passive photonic components. The presence of a fundamental indirect gap in both Si and Ge however, severely limits these materials …
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A study of silicon and germanium junctionless transistors
… (JNT) have been evaluated for both Silicon and Germanium channels. The performance of Silicon JNTs with 22 nm gate length have been characterized at elevated temperature and stressed conditions. Furthermore, steep Subthreshold Slopes (SS) in JNT and IM devices are compared. It is observed that …
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Plastic Relaxation of Highly Tensile Strained (100) Ge/InGaAs Heterostructures
… the optoelectronic properties of epitaxial germanium (Ge) layers. As a result, tensile-Ge (and#949t-Ge) layers grown on larger lattice constant InGaAs or GeSn have attracted great research interest. However, no previous studies have investigated the plastic relaxation occurring in these …
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Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… narrow bandgap semiconductors, such as germanium (Ge) and InxGa1-xAs, enhance the ON-state current and improve the switching behavior of TFET devices, thus making these materials attractive candidates for further study. Moreover, epitaxial growth of Ge on InxGa1-xAs results in tensile …
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Atomic Layer Deposition of Vanadium Dioxide: Synthesis, Doping, and Device Applications
Vanadium dioxide (VO₂) is a phase change material whose metal-insulator transition (MIT) has inspired a variety of applications. The MIT makes VO₂ useful for devices with improved switching performance and as the building block for alternative computing architectures such as oscillators and …
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Tensile-Strained Ge/InₓGa₁₋ₓAs Heterostructures for Electronic and Photonic Applications
… power dissipation) pose key technical challenges moving forward. Novel material innovations and device architectures, such as group IV and III-V materials and tunnel field-effect transistors (TFETs), have been proposed as solutions for the beyond Si era. TFETs benefit from steep switching …
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Heteroepitaxial Ge on Si via High-Bandgap III-V Buffers for Low-Power Electronic Applications
… consumption and thus, necessitates supply voltage scaling in order to maintain low-power device operation. However, with increased supply voltage scaling, transistor drive current is significantly degraded due to the low carrier mobility of Si. To overcome the key challenges of device and …
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Aluminum-induced crystallization of semiconductor thin films
… of the semiconductors, such as silicon (Si), germanium (Ge) or their alloys, are turning into the most promising functional materials in the energy technology. However, the morphologies of these semiconductor thin films must be varied to be suitable for the different applications, e.g. a …
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Low temperature heterogeneous integration of germanium on silicon
… bandwidths and higher degrees of multiplexing. Germanium (Ge)’s absorption in the Telecom wavelength range (1.3-1.55 µm), its transparency in the mid-longwave infrared (mid-LWIR) range, and its ease of integration on a Si backbone make it a perfect candidate for photodetectors (PDs) for Telecom …
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Tensile-strained Germanium via III-V Heterostructures for Emerging Electronic and Photonic Applications
… dimensions. In this context, band-engineered germanium (Ge) emerges as a pivotal candidate for propelling next-generation electronic and photonic device paradigms. This study systematically examines unintentionally doped and heavily boron (B)-doped, tensile-strained germanium (ε-Ge), …
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Controlling light-matter interaction with resonant semiconductor nanostructure
This thesis aims to bridge dielectric materials' optical and electronic properties to obtain full control of light-matter interaction at the nanoscale. The outcomes may open the way for tunable, ultra-thin, cost-effective, and energy-saving optoelectronic devices. This research first studies the …
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HfO2 as gate dielectric on Si and Ge substrate
… evaporation and e-beam evaporation on Si and Ge substrates were investigated. The dielectric constant of HfO_2 deposited by thermal evaporation on Si is in the range of 18-25. Al/HfO_2/Si MOS capacitors annealed at 450 C show low hysteresis, leakage current density and bulk oxide charges. …
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Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic
… materials with higher carrier mobility such as SiGe and Ge for p-MOSFETs, III-V compound semiconductors for n-MOSFETs and steep subthreshold swing devices such as tunnel field effect transistors (TFETs). This work evaluates both approaches utilizing germanium (Ge) and strained-Ge as a material to …
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METAL NANOMATERIALS: SYNTHESIS, DESIGN, AND APPLICATIONS
… photonics, electronics, energy conversion/storage, and medicine. To obtain a more effective functionality in application, it is indispensable to synthesize uniform metal nanoparticles with well-defined size, morphology, composition, and crystal structures. In this dissertation, we will …
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Croissance de Ge/Si et investigation de la contrainte thermique dans un substrat virtuel à base de nano-cavités
… de Si. Une approche envisagée est d’intégrer du germanium (Ge), dont les propriétés intrinsèques sont proches de celles des matériaux III-V, sur un substrat de Si afin de développer un substrat virtuel permettant l’intégration de ces matériaux. L’inconvénient majeur de cette approche provient du …
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