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Showing 1 to 20 of 398 for “"Germanium"”.
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Neue Verbindungen mit Germanium-Germanium- und Germanium-Kohlenstoff-Mehrfachbindungen
… Dieses Molekül besitzt eine sehr lange Germanium-Germanium-Doppelbindung sowie die stärksten bisher beobachteten trans-Abwinklungen der Substituenten vom Ge-Ge-Vektor. Umsetzung von 2,4-Hexadiin mit einem Diarylgermylen ergab das bisher einfachste acetylenverbrückte Bisgermaethen. …
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Morphological Evolution During Molecular Beam Epitaxy of Germanium/germanium(001) and Silicon/germanium(111)
I have investigated the evolution of islands during the heteroepitaxy of Si on Ge(111). This study involves a systematic investigation of the island nucleation kinetics, morphology and microstructure for various thicknesses and deposition temperatures. The islands formed are predominantly …
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Photoemission spectroscopy of germanium surfaces, interfaces, and germanium-silicon systems
… surface sensitivity were used to study several germanium surface and interface systems: the clean Ge(100)-(2xl) surface, the Ge(100)-Ag interface, and silicon-germanium systems. For the clean Ge(100)-(2xl) surface, both angle-integrated and angle-resolved measurements reveal a component of the …
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Germanium-rich silicon-germanium materials for field-effect modular application
… presents a study of the Franz-Keldysh effect in germanium (Ge) layers epitaxially grown on Si substrates, by using free-space spectral responsivity measurement. Generalized Franz-Keldysh formalism and separately measured Ge material constants were used to calculate theoretical results, which were …
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Electroreflectance of germanium
The band structure of germanium in the energy region .7 eV to 5 eV was investigated using the electroreflectance (ER) technique. Several transitions were detected in this energy range and in almost all cases, the associated critical points were identified as to their type and origin in k-space. At …
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INTERMOLECULAR COMPLEXES OF GERMANIUM(II
… and charged intermolecular donor complexes of germanium(II). Base stabilized complexes of dimesitylgermylene (Mes2Ge) (mes = mesityl = 2,4,6- trimethylphenyl) with either an anionic diisopropylphenyl-substituted N-heterocyclic gallium® (NHGa') ligand or a diisopropyl substituted N-heterocyclic …
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Germanium derivatives of cobalt carbonyl
… MeGeBr₃, and Me₂GeCl₂ and of Co₂(CO)₈ with germanium hydride derivatives, along with the isolation and characterisation of their products. Amongst these are the new compounds ClGe[Co(CO)₄]₃, Br₂Ge[Co(CO)₄]₂, BrGe[Co(CO)₄]₃, MeGeCl₂Co(CO)₄, MeGeBr₂Co(CO)₄, MeGeCl[Co(CO)₄]₂, MeGeBr[Co(CO)₄]₂, …
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Point defect engineering in germanium
In 1947, the first transistor was made of germanium, but soon silicon became the core material of computer chips because of its processability. However, as the typical dimensions of transistors are getting closer to the atomic size, the traditional approach of scaling down transistors to improve …
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Germanium on insulator fabrication technology
… needed to also continue to improve performance. Germanium on insulator is proposed as it combines both a high mobility material (relative to silicon) and a structure with improved scaling characteristics compared to bulk devices. The goal of this work is to develop of procedure for the transfer …
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Evolution of the surface morphology of homoepitaxial germanium(001) and heteropitaxial silicon(0.5) germanium(0.5)/germanium(001) deposited by molecular beam epitaxy at reduced temperatures
We present comprehensive experimental results on the fashion in which the Ge(001) surface roughens as a function of film thickness, deposition temperature, and substrate miscut. The results allow us to write empirical expressions for feature spacing and roughness amplitude of the growing surface …
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Carbon Incorporation During Growth of Epitaxial Germanium(1-Y)carbon(y) Layers on Germanium(001) Substrates
Epitaxial metastable Ge1-yCy alloy layers with y ≤ 0.035 were grown on Ge(001) from hyperthermal Ge and C atomic beams at deposition temperatures 250 ≤ Ts ≤ 550°C. I show that the use of hyperthermal beams allows me to controllably vary the concentration of C incorporated as Ge-C split …
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Thermoelectric properties of silicon-germanium alloys
Direct energy conversion from thermal to electrical energy, based on thermoelectric effects, is attractive for potential applications in waste heat recovery and environmentally friendly refrigeration. The energy conversion efficiency of thermoelectric devices is related to the thermoelectric figure …
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Energetics of neutral interstitials in germanium
… obstacles remain for the fabrication of germanium n-MOSFETs, including enhanced diffusion of donor atoms which leads to electrical deactivation. The preferential generation of self-interstitials via proton irradiation reduces donor diffusion and offers a promising route for effective …
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A computational study of germanium dioxide
This thesis presents calculations done on germanium dioxide. These have been done with interatomic pair potentials developed with the aid of a fitting procedure. Results for the crystalline modifications and the glassy state are presented. This includes static and dynamic properties of the …
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A planar germanium thermophotovoltaic energy converter
Massachusetts Institute of Technology. Dept. of Electrical Engineering. Thesis. 1967. E.E.
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Compensation of germanium by radiation defects.
Massachusetts Institute of Technology. Dept. of Metallurgy and Materials Science. Thesis. 1969. Ph.D.
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Commercialization of germanium based nanocrystal memory
This thesis explores the commercialization of germanium-based nanocrystal memories. Demand for smaller and faster electronics and embedded systems supports the development of high-density, low-power non-volatile electronic memory devices. Flash memory cells designed for ten years of data retention …
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The concentration of germanium in coal
… for ash, volatile matter, fixed carbon, and germanium. Richer fractions of the coal were further treated by solvent extraction, and on the basis of these tests, extraction tests of varying times were conducted. In addition, a sample of the coal was tested by froth flotation and the effects of …
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Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation
Ge surface segregation occurs during Si1--xGex(011) GS-MBE. Ge surface coverages thetaGe increase with x, ranging from 0.27 to 0.74 ML for x = 0.04--0.20. At a given film composition, theta Ge decreases with decreasing Ts due to the corresponding increase in the fraction of H-bonded Si surface …
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