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Showing 1 to 1 of 1 for “"GeSbTe (GST)"”.
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Ultra-low power phase change memory with carbon nanotube interconnects
… change in ultra small regions of Ge2Sb2Te5 (GST), we are able to lower the programming current to less than 10 μA, almost two orders of magnitude less than state-of-the-art PCM devices. Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements with …