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Showing 1 to 15 of 15 for “"GeO2"”.
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X-ray induced temperature dependent amorphous-amorphous transitions in the GeO2 glass
… irradiation on vitreous germanium dioxide (v-GeO2), a prototypical strong oxide glass, by combining X-ray photon correlation spectroscopy (XPCS), X-ray diffraction (XRD), and inelastic X-ray scattering (IXS). The results demonstrate that intense X-rays induce atomic dynamics and structural …
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Determination of thermo-optic coefficient for B2O3 and GeO2 co-doped optical silica fiber
… to better understand the influence of B2O3 and GeO2 on the thermo-optic coefficient (TOC) of silica optical fiber. This is important since understanding the contributions to the TOC by these constituents can provide insight into the way to lower the positive-valued TOC of SiO2, which is a …
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DEFECTS AND LIFETIME PREDICTION OF GERMANIUM MOSFETS
… been demonstrated: high-k/Si-cap/Ge and high-k/GeO2/Ge. Negative Bias Temperature Instability (NBTI) is still one of the main reliability issues, limiting the device lifetime. In this project, it is found that the conventional lifetime prediction method developed for Si is inapplicable to Ge …
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Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory
… layers composed of GeII states at the Ge/GeO2 interface seems unavoidable with normal passivation methods like hydrogen treatment, which has poor electrical properties and is related to the reliability problem. On the other hand, ReRAM works by formation and rupture of O vacancy conducting …
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Ordered macroporous metal oxides and carbonaceous composites for Li-ion and beyond Li-ion batteries
… structures, this research focuses on TiO2/GeO2 nanocomposites and C/TiO2 inverse opal anodes in Li-ion batteries, and carbon inverse opal anodes in Na-ion and K-ion batteries. Employing comprehensive characterization techniques, this research studies intricate material properties and …
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Development of "Core-Suction" Technique for Fabrication of Highly Doped Fibers for Optical Amplification and Characterization of Optical Fibers for Raman Amplification
… compensated fiber (DCF) with very high GeO2 doping was used to setup a Raman amplifier and the gain spectrum measured. One of the needs of Raman amplification in optical fibers is to predict an accurate Raman gain, based on the fiber's refractive index profile. A method of predicting …
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Calculations and Measurements of Raman Gain Coefficients of Different Fiber Types
… silica core fiber and two different types of GeO2-doped silica fibers given their index profiles. An essential feature of the model is the inclusion of the variation in Raman gain coefficient over the mode field due to the variation in the Ge concentration across the fiber core. The calculated …
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Acoustic mode quantization in nanostructures
… nanospheres, hollow carbon microspheres, and GeO2 nanocubes. The confined acoustic modes observed show significantly different features from those of the corresponding bulk. Based on elasticity theory, the eigenfrequencies of these modes have been calculated and they agree well with the …
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Decorating Crystallites with Atoms and Small Molecules: A First-Principles Investigation
… (110) facet of rutile TiO2 and rutile-type SiO2, GeO2 and ZnF2. Several examples of physisorption of gas particles on a number of the aforementioned surfaces were modeled using dispersion corrected-DFT. The obtained values were in excellent agreement with those found in the pertinent literature.
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Neue oxidische Rhodiumverbindungen: Syntheseversuche und strukturelle Untersuchungen : ein Beitrag zur Kristallchemie des Rhodiums in oxidischer Bindung
… untersuchten Systemen CdO - Rh2O3 - SiO2/GeO2/TiO2 sowie ZnO - Rh2O3 - SiO2 (1000°C) keine bislang unbekannten Phasen. Im System ZnO - Rh2O3 - GeO2 trat bei 1000°C begrenzte Mischbarkeit zwischen ZnRh2O4 (Spinellstruktur) und dem bei Normaldruck in der Willemitstruktur vorliegenden Zn2GeO4 …
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FABRICATION AND CHARACTERIZATION OF ACTIVE NANOSTRUCTURES
… and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, …
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Engineered substrates for coplanar integration of lattice-mismatched semiconductors with silicon
… to bonding. The poor surface passivation of GeO2 in aqueous chemo-mechanical planarization (CMP) slurries necessitates that Ge virtual substrates be planarized indirectly, using a deposited CMP layer. Furthermore, H-induced exfoliation is the only practical method of separating a thin Ge …
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A Novel Process for GeSi Thin Film Synthesis
… strain. The other depends upon the formation of GeO2. If Ge is oxidized in the absence of Si, it evaporates as GeO(g) resulting in spontaneous relaxation within the strained film. Conditions under which this occurs have been discussed along with elaborated results of oxidation kinetics of Ge-ion …
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A study of silicon and germanium junctionless transistors
… high-k passivation scheme using thermally grown GeO2 has been developed. With all developed modules, JNT with Ge channels have been fabricated by the CMOScompatible top-down process. The transistors exhibit the lowest subthreshold slope to date for Ge JNT. The devices with a gate length of 3 μm …
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High Loading Oxide Anodes For Lithium Ion Batteries Via A Superelastic Graphene Composite Approach
… rates. The active materials studied are SnO2, GeO2, ZnO, Fe2O3 and TiO2. Except for TiO2, they feature theoretical capacities ranging from 2152 mAh g-1 to 988 mAh g-1, but also suffer from volumetric expansions varying from 376% to 93% when Li is incorporated by insertion, conversion and …