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Showing 1 to 5 of 5 for “"Ge2Sb2Te5 (GST)"”.
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Ultra-low power phase change memory with carbon nanotube interconnects
… to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to lower the programming current to less than 10 μA, almost two orders of magnitude less than state-of-the-art PCM devices. Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements …
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Transient Phase-Change Effect in Phase-Change Memory Devices
… this thesis, PCRAM devices were fabricated with Ge2Sb2Te5 (GST) and AgInSbTe, which are well known nucleation and growth dominated phase change materials. The transient electrical waveform during crystallization was identified as a method to characterize the phase change phenomenon in the device …
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Nanometer-scale temperature measurements of phase change memory and carbon nanomaterials
… nanometer-scale temperature rise of thin film Ge2Sb2Te5 (GST) based PCM due to Joule, thermoelectric, interface, and grain structure effects. PCM has potential to reduce energy consumption and improve performance of future electronic memory. A new nanometer-scale thermometry technique is …
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Role of nanoscale order in the nucleation of amorphous chalcogenide alloys
Phase change materials, such as Ge2Sb2Te5 (GST), are used as the active recording media in current optical storage and upcoming solid state memories because of their remarkable properties. They can be rapidly and reversibly transformed between the amorphous and crystalline phases, and they exhibit …
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Crystallization of Amorphous Chalcogenide Nano-Regions and Test-Structure Fabrication for Non-Volatile Memories
… crystallization of amorphous nanostructures of Ge2Sb2Te5 (GST) obtained by ion implantation, both isolated or embedded in its crystalline environment (fcc or hcp). Hcp Embedded nano amorphous dot (100nm in diameter) crystallization has been observed to start by the rearrangement of the a/c …