Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 4 of 4 for “"Ge-on-Si epitaxy"”.
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Low temperature heterogeneous integration of germanium on silicon
Data communication relies on interconnects between circuit elements on a chip as well as between chips. As feature sizes decrease for silicon (Si) complementary metal oxide semiconductor (CMOS) transistors, electrical interconnects face increasing delay and increasing power consumption. Photonic …
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Germanium-on-silicon virtual substrate for lateral multijunction photovoltaics
Lateral multijunction photovoltaics based on III-V direct band gap semiconductors enable efficient energy conversion. However, lattice matching between cell and substrate requires the use of expensive Ge or III-V substrates, which limits widespread application of III-V solar cells. Cost reduction …
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Integrated Heteroepitaxial Photodetectors
Optical detection in the near-infrared and telecommunication bands has historically been performed using single-crystal bulk Ge, but the development of Ge-on-Si epitaxy reduced fabrication costs and opened doors for usage in applications including optical communications and infrared imaging. To …
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Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design and Modeling, Epitaxial Growth and Fabrication
Achieving high efficiency solar cells and concurrently driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, …