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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 28 for “"Ge/Si"”.
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Commercialization potential of compositionally graded Ge - Si₁₋x̳Gex̳ - Si substrates for solar applications
This project considers the potential of Ge - Si₁₋x̳Gex̳ - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge and GaAs has proven successful and dual junction solar cells have been …
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Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ
It is widely accepted that when transistors are scaled beyond the 10-nm technology generation in the near future, Ge, or alternatively Si1-xGex will potentially replace Si as the channel material to maintain CMOS device performance improvement. In is one of the most promising p-type dopant in Ge …
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Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ
It is widely accepted that when transistors are scaled beyond the 10-nm technology generation in the near future, Ge, or alternatively Si1-xGex will potentially replace Si as the channel material to maintain CMOS device performance improvement. In is one of the most promising p-type dopant in Ge …
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Croissance de Ge/Si et investigation de la contrainte thermique dans un substrat virtuel à base de nano-cavités
L’intégration des matériaux III-V sur silicium (Si), est une voie prometteuse de développement des composants optoélectroniques III-V à hautes performances et à faible coût. Cependant les différences entre les propriétés intrinsèques des matériaux III-V et le Si (paramètre de maille, différence de …
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Quantum oscillation studies in the unconventional superconductor YFe₂Ge₂ and in the Dirac semimetal candidates NbXSb (X = Ge/Si)
… to probe the ground state dynamics of YFe₂Ge₂, NbGeSb and NbSiSb. An unusually large Sommerfeld coefficient (γ ~ 100 mJmol⁻¹K⁻²) has been observed in the d-electron system YFe₂Ge₂. It also shows an anomalous power law temperature dependence of the electrical resistivity (ρ = ρ0 + AT³⁄²) …
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Propiedades y dependencia composicional de las transformaciones martensíticas en intermetálicos metaestables basados en MnCo(Fe)Ge(Si) y NiFe(Co)Ga
En esta tesis se va a llevar a cabo un estudio detallado de materiales basados en sistemas del tipo NiFeGa(Co) y Mn(CoFe)(GeSi)(B), con el fin de comprender sus transformaciones magnetoestructurales y las propiedades térmicas y magnéticas asociadas. Se prestará especial atención a la relación …
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Bi surfactant mediated growth for fabrication of Si,Ge nanostructures and investigation of Si,Ge intermixing by STM
Heteroepitaxial growth of Ge on Si is a prototypical system for studying strained Stranski-Krastanow growth.The technological drawback is that it turns out to be difficult to grow Ge on Si in a controlled layer-by-layer manner. After a few smooth layers have been grown epitaxially, the growth then …
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Empirical correlation of minority carrier lifetime to detect density profile in germanium on silicon heteroepitaxy
High-quality Ge-on-Si (GoS) heterostructures are pursued for many applications, including near infrared (NIR) photodetectors and integration with III-V films for multi-junction photovoltaics. However, challenges such as thermal expansion coefficient mismatch and lattice mismatch between Ge and Si …
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Quantitative Electron Microscopy Studies of Silicon Germanium/silicon(001)
… strain energy in mismatched epitaxial systems. Ge/Si(001) has been investigated for its potential importance technologically, as well as serving as a model system. However, it has been difficult to obtain data on how the strain in these islands effects the island's thermodynamic properties and …
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Phosphorus Incorporation During Silicon(001):phosphorus Gas-Source Molecular Beam Epitaxy: Effects on Film Growth Kinetics, Surface Morphology, and the Self-Organization of Germanium Quantum Dot Overlays
… the effect of growth rate and P predeposition on Ge/Si(001) island geometry, density, and spatial distributions. Ge quantum dots are deposited on three types of starting surfaces: (1) Si(001) buffer layers which serve as a reference, (2) Si(001) layers with predeposited P coverages …
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Selective epitaxial growth techniques to integrate high-quality germanium on silicon
High-quality Ge-on-Si heterostructures have been actively pursued for many advanced applications, including near-infrared photodetectors, high-mobility field effect transistors, and virtual substrates for integrating III-V multijunction solar cells. However, growing epitaxial Ge on Si poses many …
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Integration of GaAsP alloys on SiGe virtual substrates for Si-based dual-junction solar cells
Integration of III-V compound semiconductors with silicon is an area that has generated a lot of interest because III-V materials and Si are best suited for different types of devices. Monolithic integration enables the best material to be chosen for each application, enabling new functionalities …
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Ab-initio simulation of novel solid electrolytes
… low. Reports of fast lithium conduction in Li 0GeP 2S1 2 (LGPS), with conductivity of 12 mS/cm at room temperature, have shown that Li -diffusion in solid electrolytes can match or exceed the liquid electrolytes in use today. I report results of ab-initio calculations on a related system of …
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Minority carrier lifetimes in germanium on silicon heterostructures
Photodiodes sensitive in the NIR and integratable with Si have been pursued for many applications including imaging, communications, and photovoltaics. Since the Si bandgap is inefficiently matched to NIR wavelengths, photodiodes fabricated from a smaller bandgap material are needed. 25 nm …
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LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS
Building on a unique two-step, simple MBE growth technique, we have investigated possible dislocation locking mechanisms by dopant impurities, coupled with artificially introduced oxygen. In the case of n-type Ge grown on Si, our materials characterization indicates that the dislocation density …
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Deposition and Characterization of Silicon Nitride/gallium Arsenide Metal Insulator Semiconductor Structures With Heteroepitaxial Interlayers
In this thesis, an in-depth study of the growth and characterization of GaAs MIS structures with strained heterointerlayers has been undertaken by exploiting the unique and powerful capabilities of the Epicenter growth and analysis facilities at the University of Illinois. The novel heteroepitaxial …
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Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor Structures
Monte Carlo method for the simulation of hole dynamics in degenerate valence subbands of cubic semiconductors is developed. All possible intra- and inter-subband scattering rates are theoretically calculated for Ge, Si, and GaAs. A far-infrared laser concept based on intersubband transitions of …
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Heteroepitaxial Germanium-on-Silicon Thin-Films for Electronic and Photovoltaic Applications
… and 32% under AM0. However, the expensive cost has made it challenging for III-V solar cells to compete with the mainstream Silicon (Si) technology. Novel approaches to lower down the cost per watt for III-V solar cells will position them to be among the key contenders in the renewable …
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III-V compositionally graded buffers for heterostructure integration
… commercial applications such as high speed transistors, light emitting diodes, solid state lasers, photovoltaics, and photo-detectors. However, the range of compositions used in these applications is often limited to the range of InyGa₁-yAs compositions which are lattice matched to elementary or …
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