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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 1100 for “"Ge"”.
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Growth of Single Crystal, Metastable Ge(1-X)sn(x) Alloys and Ge(1-X)sn(x)/ge Strained-Layer Superlattices on Ge(001)2 X 1 by Molecular Beam Epitaxy
Single-crystal metastable diamond-structure $\rm Ge\sb{1-x}Sn\sb{x}$/Ge strained-layer superlattices (SLS) with x up to 0.24 (the equilibrium solid solubility of Sn in Ge is $<$0.01) were also grown on Ge(001)2x1 substrates using temperature-modulated molecular-beam epitaxy with maximum growth …
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Ge photodetectors for Si microphotonics
This thesis demonstrates the integration of pure Ge near-infrared photodetectors on Si. Ge epilayers were grown directly on Si by a two-step ultra-high-vacuum/chemical-vapor-deposition (UHV/CVD) process. This work conclusively proves that threading-dislocation densities in the Ge epilayers, …
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Coating and Doping of Ge QDs
… dots (QDs) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications, particularly solar applications. Unlike doping of traditional bulk semiconductors materials, the location of the doping element can be either within the crystal lattice …
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Compressively strained Ge trigate p-MOSFETs
… of interest, particularly for p-MOSFETs, is Ge because it has very high intrinsic hole mobility. Further improvements in hole mobility can be achieved by straining the material. At the same time it is important to study strained Ge transport in device architectures such as trigate MOSFETs. …
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Strain-engineered CMOS-compatible Ge photodetectors
… first CMOS process compatible high-responsivity Ge p-i-n diodes for 1.55 [mu]m wavelengths. The thermal expansion mismatch between Ge epilayers and Si substrates was used to engineer tensile strain upon cooling from the growth temperature. This 0.2% tensile strain results in a lowering of the …
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Creation of Surface and Bulk Defects of Ge and Surface Roughening of Ge During High Energy Ion Irradiation
Submitted by Jenny Wong-Welch (wongwel2@illinois.edu) on 2011-11-10T17:26:40Z No. of bitstreams: 1 2001_kim.pdf: 5955624 bytes, checksum: 04d9d46f170c764db23bc697b9df9525 (MD5)
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Effectiveness of Introduction to College GE-100
… to teach the class, Introduction to College to new students who are beginning college, was greatly accepted with much reservation. Numerous memories reflected back to that special period when the writer was faced with those daunting decisions of where to attend college. Those memories of …
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Ge-on-Si laser for silicon photonics
Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge growth for photonic devices. The focus of this document will be exclusively on …
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Quantum oscillation studies in the unconventional superconductor YFe₂Ge₂ and in the Dirac semimetal candidates NbXSb (X = Ge/Si)
… to probe the ground state dynamics of YFe₂Ge₂, NbGeSb and NbSiSb. An unusually large Sommerfeld coefficient (γ ~ 100 mJmol⁻¹K⁻²) has been observed in the d-electron system YFe₂Ge₂. It also shows an anomalous power law temperature dependence of the electrical resistivity (ρ = ρ0 + AT³⁄²) …
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A GE Hungary Kft. HR osztályának ügyintézői feladatai
A dolgozatomban a 14 hetes szakmai gyakorlatomat mutattam be. A feladataim elvégzése közben azt figyeltem meg, hogy a HR osztály mennyire játszik fontos szerepet a munkavállalók és a vállalkozás vezetői közötti kapcsolattartásban és információáramlásban.
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Gamma-Ray Optical Studies of ⁷³Ge and ⁵⁷Fe
… of a gamma-ray laser. This work is a "marriage" between the Borrmann effect, which is a consequence of the dynamical theory of x-ray diffraction, and time-filtering which comes from time-domain Mossbauer spectroscopy.</p> <p>Our experiments involved the search for a nuclear Borrmann effect …
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Design considerations for Ge-on-Si waveguide photodetector
… etc.) is given by the transit time of the photogenerated electron-hole pairs, it can not be minimised by decreasing the thickness of the depletion region without reducing quantum efficiency (i.e. the fraction of the incident light that is absorbed). Waveguide photodetectors have been developed …
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GE-PAC 4020/EAI 580 Hybrid Computing System
… This system welds the capabilities of a GE/PAC<sup>®M/sup> 4020 Process Computer and an EAI® 580 Analog/Hybrid Computing System by means of a special Hybrid Interface. The Hybrid Interface consists of five modules. First, there is the hybrid control module which mediates status and …
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HfO2 as gate dielectric on Si and Ge substrate
… evaporation and e-beam evaporation on Si and Ge substrates were investigated. The dielectric constant of HfO_2 deposited by thermal evaporation on Si is in the range of 18-25. Al/HfO_2/Si MOS capacitors annealed at 450 C show low hysteresis, leakage current density and bulk oxide charges. …
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Modelagem do relé de proteção diferencial tipo BDD15B-GE
… partir do relé de proteção diferencial BDD15B da General Electric. Ele está fundamentado nos estudos apresentados por Chaudhary, cujo modelo apresenta características de percentagem e restrição harmônica. Suas características, assim como a modelagem dos componentes do relé que usam circuito em …
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Limited-area growth of Ge and SiGe on Si
… density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low pressure chemical vapor deposition was investigated for two limiting cases of strain states: thin, strained, high Ge content SiGe films for transistor applications, and thick, relaxed Ge films, for potential …
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Investigation of temperature effects on electro mechanically cooled Ge detectors
… originated due to anecdotal evidence that Ge detectors encountered problems with energy resolution when they were located in uncontrolled environmental conditions, in which temperature variations can be as great as 30°�C. This project aims to investigate how much of an effect this …
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Ge Hong and the Making of an Emergency Medicine Formulary
The Zhouhou beiji fang 肘後備急方 (Emergency formulas to keep on hand) was compiled in the fourth century by the Daoist, alchemist, and scholar, Ge Hong 葛洪 (283–343) under the name Zhouhou jiucu 肘後救卒 ([Formulas for] resuscitation to keep on hand). Since its creation, the text has undergone numerous …
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Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
… devices using electrodeposition of metal on Ge for Schottky barrier fabrication. This low energy metallisation technique offers numerous advantages over the physical vapour deposition techniques. Electrical characteristics of the grown diodes show a high quality rectifying behaviour with …
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