Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 6 of 6 for “"Gate oxide breakdown"”.
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Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability
… (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end …
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RF to Millimeter-wave Linear Power Amplifiers in Nanoscale CMOS SOI Technology
… nevertheless, remains challenging due to the low breakdown voltages of CMOS transistors and the loss from on-chip matching networks. These limitations have reduced the design space of CMOS power amplifiers to narrow-band, low linearity metrics often with insufficient gain, output power, and …
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Device and Circuit Level EMI Induced Vulnerability: Modeling and Experiments
… integrated circuits (ICs). Metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the ICs may be disrupted under EMI conditions due to transient voltage-current surges, and their internal states may change undesirably. In this work, the vulnerabilities of silicon MOSFETs …
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Study Of Nanoscale Cmos Device And Circuit Reliability
… of the transistor dimensions -The transistor gate length drops down to tens of nanometers and the gate oxide thickness to 1 nm. In the future several years, the deep submicron devices will dominate the semiconductor industry for the high transistor density and the corresponding performance …
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Investigation of factors determining charged device model electrostatic discharge reliability of integrated circuits
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2027-08-01
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Reliability and Data Analysis of Wearout Mechanisms for Circuits
… failure analysis of circuits, as well as investigate the factors for accelerating testing for front-end-of-line time-dependent dielectric breakdown (FEOL TDDB). The separation of wearout mechanisms for circuits will be investigated, and the identification of failure modes for the failure samples …