Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 6 of 6 for “"Gate driver design"”.

  1. Pulsed MOSFET based linear transformer driver

    … power applications. This thesis focuses on the design of a MOSFET based pulsed power system capable of generating 2.2kV, 200A pulses with turn on and turn off times of less than 10ns and 20ns respectively. In order to achieve the target specification, a high speed current source MOSFET gate

    strathclyde Repository record for Pulsed MOSFET based linear transformer driver (opens in a new tab)

  2. High Power Inverter EMI Characterization and Improvement by Auxiliary Resonant Snubber Inverter

    … and concluded. The control interface circuit and gate driver design are described in the appendix. The implementation of variable charging time control of the resonant inductor current is also explained in the appendix.

    vt Repository record for High Power Inverter EMI Characterization and Improvement by Auxiliary Resonant Snubber Inverter (opens in a new tab)

  3. A Wide Bandgap Silicon Carbide (SiC) Gate Driver for High Temperature, High Voltage, and High Frequency Applications

    … and switching speed. Integration of gate driver circuitry on the same chip, or in the same package, as the power device would significantly reduce the parasitic inductance, require far less thermal management paraphernalia, reduce cost and size of the system, and result in more …

    arkansas Repository record for A Wide Bandgap Silicon Carbide (SiC) Gate Driver for High Temperature, High Voltage, and High Frequency Applications (opens in a new tab)

  4. Gate Driver for Phase Leg of Parallel Enhancement-Mode Gallium-Nitride (GaN) Transistors

    … are higher. The worst-case performance of this design is limited by both the gate driver and the device shortcircuit robustness. Due to the fast switching speed of the GaN HEMT, the false turn-on phenomenon caused by the Miller effect can be a problem. A shoot through may occur with one switch …

    vt Repository record for Gate Driver for Phase Leg of Parallel Enhancement-Mode Gallium-Nitride (GaN) Transistors (opens in a new tab)

  5. Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters

    … power converter applications have been investigated. Firstly, the methodology is developed to evaluate the power semiconductor devices for high power density applications. The power density figure of merit (PDFOM) for power MOSFET and IGBT are derived from the junction temperature rise, power …

    vt Repository record for Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters (opens in a new tab)

  6. Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control

    This work investigates the voltage scaling feasibility of several low voltage SiC MOSFET modules operated as a single series-connected switch using active gate control. Both multilevel and two-level topologies are capable of achieving higher blocking voltages in high-power converter applications. …

    vt Repository record for Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control (opens in a new tab)