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Showing 1 to 20 of 30 for “"Gate dielectrics"”.
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Alternative gate dielectrics and application in nanocrystal memory
… scalability than the conventional floating gate Flash memory. In this work, the performance of germanium (Ge) nanocrystal memory structures, employing high dielectric constant (high-k) materials to replace the tunnel oxide and capping oxide (control oxide) layers, was investigated. It was …
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1/f noise in MOSFETs with ultrathin gate dielectrics
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1992
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Characterization of ultrathin gate dielectrics and multilayer charge injection barriers
… a simultaneous reduction in the thickness of the gate dielectric, SiO_2, of a MOSFET. Gate oxides in the ultrathin regime (<35 A) feature a large direct tunneling leakage current. The presence of this leakage current requires a reevaluation of standard characterization techniques as well as a …
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Investigation Of High-k Gate Dielectrics And Metals For Mosfet Devices.
… the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good functionality and higher performance increases the demand for high-k dielectric based MOS devices. This thesis gives an in-depth study of threshold …
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Electrical characterization of high-k gate dielectrics for advanced CMOS gate stacks
… quality of metal oxide semiconductor (MOS) gate stack structures are critical to future CMOS technology. As SiO_2 was replaced by the high-k dielectric to further equivalent oxide thickness (EOT), high mobility substrates like Ge have attracted increasing in replacing Si substrate to further …
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Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.
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Probing technique for energy distribution of positive charges in gate dielectrics and its application to lifetime prediction
… an increase of nitrogen concentration in gate dielectric, a higher operation electrical field, and a higher temperature. Despite of many years’ research work, there are questions on the correctness of the NBTI lifetime predicted through voltage acceleration and extrapolation. The …
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Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics
… scaling gives rise, among others, to high gate tunnelling currents in contemporary silicon dioxide (SiO2) based Metal-Oxide- Field Effect Transistors (MOSFETs). SiO2 is therefore expected to be replaced in future technologies with alternative dielectrics. Several dielectrics with high …
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Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.
In recent years, advanced high κ gate dielectrics are under serious consideration to replace SiO2 and SiON in semiconductor industry. Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to …
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Pentacene Based Organic Electronic Devices
… (PMMA) and cross-linked PMMA (cPMMA) gate dielectrics. The electrical characteristics of pentacene-based organic thin-film transistors (OTFTs) using PMMA as the gate dielectric are reported. Uniform pinhole-free and crack-free films of PMMA could be obtained by spin-coating, with a …
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
HfO2 have been under intense investigation for gate dielectric application into the 70 nm technology nodes and beyond to replace conventional SiO2 or oxynitrides since it possesses a dielectric constant of 22 – 25, a large band gap of 5.6 eV with sufficient band offsets of larger than 1.5 eV, and …
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High-K MOSFETS with high mobility channels
… consists of two parts. The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe …
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Fundamental and Applied Aspects of Electronics Based on Single -Walled Carbon Nanotube Thin Films
… transistors (TFTs), we adopted high capacitance gate dielectrics to reduce the device operation voltage from ∼20 V to ∼1 V and, in related work, the hysteresis has been reduced from levels so large that the transistors could be used effectively as memory devices to values that are nearly …
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2D material devices for low power logic and memory applications
This thesis investigates low power tunneling field effect transistors (task 1) and low power ferroelectric memory devices (task 2) based on two-dimensional (2D) materials. In the first task, electrical characteristics of mechanically exfoliated n-type Molybdenum Disulfide (MoS2 ) and a new p-type …
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TiN/HfO2/SiO2/Si gate stacks reliability : Contribution of HfO2 and interfacial SiO2 layer
Hafnium Oxide based gate stacks are considered to be the potential candidates to replace SiO_2 in complementary metal-oxide-semiconductor (CMOS), as they reduce the gate leakage by over 100 times while keeping the device performance intact. Even though considerable performance improvement has been …
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Non-Silicon MOSFETs and Circuits with Atomic Layer Deposited Higher-k Dielectrics
… devices has now called for research on higher-k gate dielectrics integration with high mobility channel materials such as III-V semiconductors and germanium. Ternary oxides, such as La2-xYxO3 and LaAlO3, have been considered as strong candidates due to their high dielectric constants and good …
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Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.
Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and …
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FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY
… electric field, frequency, duty cycle, and gate dielectric composition. We have improved upon the traditional measurement techniques which suffered from an underestimation of the magnitude of Vth shifts because they failed to account for trapped charge relaxation. Specifically, we have …
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High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics
… mobility. In this work, two methods are investigated for improving the performance of Ge MOSFETs. First, the formation of an interfacial passivation layer via in-situ ozone oxidation is explored. Long channel Ge p- and n-MOSFETs are fabricated with A12 0 3 and HfO2 gate dielectrics deposited by …
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