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Showing 1 to 1 of 1 for “"Gate dialectrics"”.
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Characterization of ultrathin gate dielectrics and multilayer charge injection barriers
… a simultaneous reduction in the thickness of the gate dielectric, SiO_2, of a MOSFET. Gate oxides in the ultrathin regime (<35 A) feature a large direct tunneling leakage current. The presence of this leakage current requires a reevaluation of standard characterization techniques as well as a …