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Showing 1 to 3 of 3 for “"Gate Stress"”.
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Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise
… mechanisms in GaN-on-Si devices due to gate stress.</p> <p>LFN is a useful tool for probing different regions of the device that cannot be measured through direct means. LFN generation in GaN HEMTs is based on the carrier fluctuation theory of 1/f noise generation which states …
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Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors
… for this application as it offers lower gate leakage than its HEMT counterpart. GaN has excellent material properties, but there are still many challenges to overcome before its widespread commercial deployment. Time-dependent dielectric breakdown (TDDB), a catastrophic condition arising …
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Bias temperature instability (BTI) in GaN MOSFETs
… high electron mobility transistor with insulated gate (MIS-HEMT) is an attractive transistor structure because of its high breakdown voltage combined with low gate leakage current. Impressive device performance has recently been reported. However, before GaN MIS-HEMTs cab be deployed in the field, …