Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 9 of 9 for “"Gate Metal"”.
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Investigation Of High-k Gate Dielectrics And Metals For Mosfet Devices.
… the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good functionality and higher performance increases the demand for high-k dielectric based MOS devices. This thesis gives an in-depth study of threshold …
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Processing technology for high quality AlGaN/GaN MOSHEMT interfaces
… switching applications, it is necessary to lower gate leakage by introducing a gate insulator between the gate metal and the AIGaN barrier. This thesis focuses on studying the impact of processing conditions on the quality of the gate stack of AIGaN/GaN based MISHEMTs. First, the role of mobile …
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EFFECTS OF STRUCTURAL MODIFICATION ON RELIABILITY OF NANOSCALE NITRIDE HEMTs
… proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating …
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Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs
… by an electrochemical cell formed at the gate edge where gate metal, the II-N surface and the passivation layer meet. Moreover, the permanent decrease of the drain current is directly linked with the formation of the surface pits, while the permanent increase of the gate current is found …
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Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
… power electronics is the enhancement-mode p-GaN Gate High Electron Mobility Transistor (HEMT) which matches the power, voltage, and efficiency of conventional GaN FETs but most importantly features a positive threshold voltage. This is achieved by the insertion of a Mg-doped GaN layer above the …
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MODELING QUANTUM AND COULOMB EFFECTS IN NANOSCALE ENHANCEMENT-MODE TRI-GATE III-V MOSFETs
… as ALD, layer transfer, high-k dielectrics, and metal gates are now being used to explore these MOSFETs. III-V materials are also being investigated for possible use in quantum-mechanical devices (such as tunnel transistors), in spin-FET devices, and in qubits and memory cells. However, there are …
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Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
… process, the mesa isolation was refined, the metal semiconductor contacts were improved, i.e. the ohmic contact resistance as well the gate leackage current were reduced, and the whole process chain was optimized in terms of reproducibility and reliability. Although every single process step …
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Reliability Characterisation of III-Nitrides Based Devices for Technology Development
… (e.g. access resistance of contacts, and gate leakage current) persist to be limiting reliability factors. The mechanisms contributing towards performance and reliability degradation of AlGaN/GaN HEMTs, namely self-heating, charge trapping and strain, are required to be minimised; an …
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Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution
Thin films of metals and metal-oxides are deposited in batch (Chemical Fluid Deposition) and cyclic (Atomic Layer Deposition) processes from metal organic precursors in supercritical carbon dioxide solutions. New materials have been introduced in the deposition processes. Deposited films are …