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Showing 1 to 3 of 3 for “"Gallium arsenide semiconductors"”.
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Photoconductivity and minority carrier lifetime in tin sulfide and gallium arsenide semiconductors for photovoltaics
… the mobilitylifetime products ([mu][tau]) of gallium arsenide (GaAs) and annealed and un-annealed tin sulfide (SnS) with respective p-doping carrier concentrations of 1018 cm-3, 1016 cm-3, and 1015 cm-3 through photoconductivity measurements. Films are 1 [mu]m thick and have a four-bar and …
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Atomic-scale structure of the tin DX center and other related defects in aluminum gallium arsenide semiconductors using Mössbauer spectroscopy
Includes bibliographical references (pages 135-144).
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Microscopy study of extreme lattice mismatched heteroepitaxy using interfacial misfit arrays
The Sb-bearing compounds offer a wide range of electronic bandgaps, bandgap offsets and electronic barriers along with the extremely high electron mobility and therefore enable a variety of high speed, low power electronic devices and infrared light sources. Therefore, lattice-mismatched epitaxy of …