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Showing 1 to 2 of 2 for “"Gallium Nitride (GaN) HEMTs"”.
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Highly Efficient Gan-Based Single-Phase Transformer-Less Pv Grid-Tied Inverter
… also investigates the impact of emerging Gallium Nitride (GaN)-based power devices on a single-phase transformer-less inverter in terms of efficiency, high switching frequency capability, volume and cooling efforts. GaN device structure, as well as static and dynamic characterization, are …
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Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance …