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Showing 1 to 20 of 123 for “"Gallium Nitride (GaN)"”.
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Gallium Nitride (GaN) quantum dot layer formation
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.
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High-Frequency Oriented Design of Gallium-Nitride (GaN) Based High Power Density Converters
The wide-bandgap (WBG) devices, like gallium nitride (GaN) and silicon carbide (SiC) devices have proven to be a driving force of the development of the power conversion technology. Thanks to their distinct advantages over silicon (Si) devices including the faster switching speed and lower …
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Gate Driver for Phase Leg of Parallel Enhancement-Mode Gallium-Nitride (GaN) Transistors
… a higher power rating and broader application, Gallium nitride (GaN) is a promising next-generation power switch. The current four GaN HEMTs in paralleled phase leg that can block 400 V and conduct 200 A current is very beneficial, thus making the protection method on a GaN phase leg an urgent …
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Experimental Evaluation of Medium-Voltage Cascode Gallium Nitride (GaN) Devices for Bidirectional DC–DC Converters
… Wide bandgap (WBG) semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), exhibit superior physical properties and demonstrate great potential for replacing conventional Si semiconductors with WBG technology, pushing the boundaries of power devices to handle higher …
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Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
Group III-nitrides semiconductors composed of gallium nitride (GaN), Indium nitride (InN), and aluminium nitride (AlN) had found use in broad technologies especially in optoelectronic and power devices. The main issues that limit the performance of GaN-based ultraviolet light-emitting diodes …
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High-Efficiency and High-Frequency Resonant Converter Based Single-Stage Soft-Switching Isolated Inverter Design and Optimization with Gallium-Nitride (GaN)
… to ensure fully ZVS performance for primary side GaN devices. As a large part in loss breakdown, the optimization for transformer is essential. The LLC converter can achieve above 99% efficiency with proposed optimization approach. Moreover, the channel turn-off energy model is presented for a …
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Towards the efficiency limit of visible light-emitting diodes
… radiation and with the focus on gallium-nitride (GaN) technologies, we experimentally demonstrate a thermally enhanced blue LED operating in the low bias regime, and theoretically investigate the characteristics and criteria for efficiency visible lighting based on a thermodynamic …
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Mechanisms of the Wurtzite to Rock Salt Phase Transitions in Galium Nitride
… the wurtzite to rock salt phase transition in gallium nitride ( GaN ). Using the mapping algorithm of COMSUBS we found 435 possible mechanisms for this transition. We then used FIREBALL to do density functional theory calculations and found enthalpy barrier heights for the transition pathway. …
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Gallium Nitride phononic crystal resonator
We present a Gallium Nitride (GaN) Lamb Wave resonator using a Phononic Crystal (PnC) to selectively confine elastic vibrations with wide-band spurious mode suppression. A unique feature of the design demonstrated here is a folded PnC structure to relax energy confinement in the non-resonant …
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Remote epitaxy of III-N membranes on amorphous boron nitride
Amorphous boron nitride (aBN) has found broad applications in industrial applications. Thick aBN has been thoroughly investigated¹,², including the recent revisiting of this material at nanometer thickness. However, most investigations of aBN so far have been based on three-dimensional structures. …
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Overview and development of a wide bandgap, high temperature circuit and measurement solution
… the dawn of wide bandgap materials, primarily gallium nitride (GaN) and silicon carbide (SiC), research has pushed toward high temperature power circuit operation to either reduce cooling system requirements or operate in high temperature environments due to their theoretically higher …
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Thermally Hardened RF GaN HEMTs in Extreme Environments
… and deep gas/oil drilling, among others. Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are especially well suited for high temperature electronic applications due to their low intrinsic carrier concentration and excellent electrical properties. Despite great progress in …
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A Study on the Nature of Anomalous Current Conduction in Gallium Nitride
Current leakage in GaN thin films limits reliable device fabrication. A variety of Ga and N rich MBE GaN thin films grown by Rf, NH3, and Rf+ NH3, are examined with electrical measurements on NiIAu Schottky diodes and CAFM. Current-voltage (IV) mechanisms will identify conduction mechanisms on …
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N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP
… high electron mobility, and saturation velocity, gallium nitride (GaN) material has emerged as a key contender in the high-performance semiconductor market, paving the way for the future optoelectronics and high-frequency electronics. The oxide/semiconductor interface quality could significantly …
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A compact transport and charge model for GaN-based high electron mobility transistors for RF applications
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving …
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Near junction thermal management of GaN HEMTs via wafer bonding
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore …
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Behavioral Model and Predistortion Algorithm to Mitigate Interpulse Instabilities Induced by Gallium Nitride Power Amplifiers in Multifunction Radars
The incorporation of Gallium Nitride (GaN) Power Amplifiers (PAs) into future high power aperture radar systems is certain; however, the introduction of this technology into multifunction radar systems will present new challenges to radar engineers. This dissertation describes a broad investigation …
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Assessing the performance and reliability of GaN based electronics via optical and electrical methods
Gallium nitride (GaN) based electronics have shown great potential for RF devices and power electronics. Its superior material properties have enabled the fabrication of high frequency and high voltage devices. Under high power operational conditions, significant localized Joule heating occurs near …
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Highly Scaled p-GaN-gate HEMTs for Low Voltage Power Electronics
… based on wide bandgap semiconductors such as gallium nitride (GaN) have emerged as promising alternatives to traditional silicon devices for low-voltage (10-100 V) applications. This work investigates the design, fabrication, and scaling of p-GaN-gate highelectron-mobility transistors (HEMTs). …
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Design/System Technology Co-optimization of Gallium Nitride High Electron Mobility Transistors for Next-G 3DIC Heterogeneous Integration of Gallium Nitride and Si CMOS
… and subterahertz RF front ends and transistors. Gallium Nitride (GaN) transistors have continued to push the limits of high-power density, high frequency semiconductor devices. The future of GaN radio frequency (RF) circuit technology is at the intersection of device engineering, advanced …
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