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Showing 1 to 20 of 26 for “"Gallium Arsenide Phosphide"”.

  1. Lifetime Spectra of Gallium Arsenide-Phosphide and Nitrogen-Doped Gallium Arsenide-Phosphide

    Lee, Michael H.University of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:39:10Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7511795.PDF: 4228710 bytes, checksum: b6bf26e7d08a16c7f80c48cf235d52c1 (MD5) Previous issue date: 1974

    uiuc Repository record

  2. Lifetime spectra of gallium arsenide phosphide and nitrogen-doped gallium arsenide phosphide

    Lee, Michael H.2012

    Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-18T21:10:02Z No. of bitstreams: 1 1974_lee.pdf: 4550212 bytes, checksum: 90dd9031c1f8520031f387a0967a1e6a (MD5)

    uiuc Repository record

  3. Optical Properties of Gallium Arsenide-Phosphide

    Clark, George Dee, Jr.University of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-08T22:24:02Z (GMT). No. of bitstreams: 1 6706587.pdf: 3532310 bytes, checksum: e7a893c400dfca5546c781a1ba3ef887 (MD5) Previous issue date: 1966

    uiuc Repository record

  4. Photoluminescence and depth profiling studies in gallium arsenide phosphide

    Yu, Tan-Hua2011

    Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-17T16:08:46Z No. of bitstreams: 1 1980_yu.pdf: 4746427 bytes, checksum: 304b1d86cf5353e9342c44565e1ced55 (MD5)

    uiuc Repository record

  5. Indium-Gallium Phosphide-Arsenide - Gallium Arsenide-Phosphide Single Heterojunction Lasers

    Coleman, James JosephUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:13Z (GMT). No. of bitstreams: 1 7606730.pdf: 2847725 bytes, checksum: 538397f02a07c1415ab059d85212392e (MD5) Previous issue date: 1975

    uiuc Repository record

  6. Annealing Studies of Beryllium in Gallium-Arsenide and Gallium Arsenide Phosphide

    McLevige, William VictorUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:49Z (GMT). No. of bitstreams: 1 7811267.pdf: 3853791 bytes, checksum: a0f2801cbd42501b2dbbe4b3a6d222d7 (MD5) Previous issue date: 1978

    uiuc Repository record

  7. Nitrogen Isoelectronic Traps in Gallium Arsenide Phosphide and Aluminum Gallium Arsenide

    Wolford, Donald James, Jr.University of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:55:11Z (GMT). No. of bitstreams: 1 8009215.pdf: 14760264 bytes, checksum: 3f036ee1b4df72f7e4d97b2045a7536b (MD5) Previous issue date: 1979

    uiuc Repository record

  8. Laser Operation of Solution-Grown Aluminum Gallium Arsenide Phosphide Andindium Gallium Phosphide

    Burnham, Robert DannerUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:38:43Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7206877.PDF: 1704856 bytes, checksum: 9ae38236ce311387ebe47a74a54ebe63 (MD5) Previous issue date: 1971

    uiuc Repository record

  9. Acceptor Behavior of Implanted Beryllium in Gallium-Arsenide and Gallium Arsenide-Phosphide

    Chatterjee, Pallab KumarUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:22Z (GMT). No. of bitstreams: 1 7624056.pdf: 6487442 bytes, checksum: 2c2f82ebf4bd3de34fb997cc35bb9693 (MD5) Previous issue date: 1976

    uiuc Repository record

  10. Liquid Phase Epitaxial Indium-Gallium-Arsenide - Phosphide Avalanche Photodiodes for Near-Infrared Detection

    Cook, Louis WalterUniversity of Illinois at Urbana-Champaign2014

    The fabrication and characterization of InGaAsP/InP avalanche photodiodes for near-infrared detection is described in detail. Particular material requirements which must be satisfied for these devices are considered and the special techniques involved in the use of liquid phase epitaxy which have …

    uiuc Repository record

  11. Study of exciton localized by random potential in indirect gallium arsenide phosphide alloys

    Lai, Shui Tong2011

    We have studied in detail a new structure Mx/0 in photoluminescence spectra from n-type indirect GaAs P alloys. The intensity of Mx/0 starts l -x x to saturate relative to that of the donor-bound exciton (Do) at very low excitation laser po\vcr. It has a low activation energy (2 meV) and prominant …

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  12. The Characterization of Liquid Phase Epitaxial Indium-Gallium - Arsenide - Phosphide and Indium-Gallium - Arsenide

    Tashima, Mark MasatoUniversity of Illinois at Urbana-Champaign2014

    The growth of InGaAsP and InGaAs by liquid phase epitaxy (LPE) on InP substrates has been investigated to obtain the optimum crystal growth parameters to produce high quality epitaxial layers. The lattice mismatch of these layers with respect to the underlying InP substrate was determined by X-ray …

    uiuc Repository record

  13. Photoluminescence Studies of the Nitrogen Isoelectronic Trap in Gallium Arsenide-Phosphide and Indium-Gallium Phosphide

    Dupuis, Russell DeanUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-10T19:07:14Z (GMT). No. of bitstreams: 1 7405556.pdf: 2984409 bytes, checksum: 32d7ecff7a8789c4b36121c6c5ee6d00 (MD5) Previous issue date: 1973

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  14. Liquid phase epitaxial growth and heterointerface characteristics of long-wavelength indium gallium arsenide phosphide heterostructures

    Brunemeier, Paul Edward2011

    "Data are presented that demonstrate that the InGaAsP quaternary grown by constant temperature liquid phase epitaxy on InP substrate can, under certain growth conditions, exhibit considerably narrower diffraction profile half-widths than previously reported. The double crystal x-ray diffraction …

    uiuc Repository record

  15. Solution Kinetics and Impact Ionization in the Indium-Gallium - Arsenide Phosphide Alloy System (Crystal Growth, Photodetectors)

    Tabatabaie, NaderUniversity of Illinois at Urbana-Champaign2014

    This thesis covers topics in crystal growth, solution kinetics, device fabrication, and device physics in the InGaAsP/InP material system. It is divided into three sections. Chapter I is a detailed account of the liquid phase epitaxial (LPE) crystal growth of In(,1-x)Ga(,x)As(,y)P(,1-y) layers …

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  16. Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy

    Day, Ding-Yuan SamuelUniversity of Illinois at Urbana-Champaign2014

    System effects and data analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deep levels in the GaAs-GaP system.

    uiuc Repository record

  17. Liquid Phase Epitaxial Growth and Heterointerface Characteristics of Long-Wavelength Indium - Gallium Arsenide - Phosphide Heterostructures (Lasers, Semiconductors)

    Brunemeier, Paul EdwardUniversity of Illinois at Urbana-Champaign2015

    185 p.

    uiuc Repository record

  18. Tunneling in the Iii-v Semiconductor Alloys Indium Gallium Phosphide, Gallium Aluminum Arsenide, and Gallium Arsenide Phosphide

    Korb, Harold WilfredUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-10T19:06:52Z (GMT). No. of bitstreams: 1 7212254.pdf: 3159809 bytes, checksum: 3806fd4032e22d4e943204391b117cec (MD5) Previous issue date: 1971

    uiuc Repository record

  19. Luminescence, Absorption, and Pressure Studies of Nitrogen-Doped and Nitrogen-Free Gallium Arsenide-Phosphide and Indium-Gallium-Phosphide

    Nelson, Ronald JarlUniversity of Illinois at Urbana-Champaign1976

    Made available in DSpace on 2015-05-13T15:22:01Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7624149.PDF: 3820930 bytes, checksum: e51ccddc0ba56fa044383103a1aeba74 (MD5) Previous issue date: 1976

    uiuc Repository record

  20. Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recombination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide

    Campbell, Joe CharlesUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:39:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7411966.PDF: 3851014 bytes, checksum: cd1a4a475e1514b2d5520a344358ec96 (MD5) Previous issue date: 1973

    uiuc Repository record

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