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Showing 1 to 20 of 34 for “"Gallium Arsenide (GaAs)"”.

  1. Characterization of shallow impurities in high-purity gallium arsenide and indium phosphide using photothermal ionization spectroscopy: Nonequilibrium incorporation of amphoteric impurities

    Lee, BunUniversity of Illinois at Urbana-Champaign2011

    … behavior of Group IV impurities in high purity gallium arsenide (GaAs) and indium phosphide (InP) grown by various growth techniques have been quantitatively studied by employing the characterization techniques, Hall-effect measurements, photothermal ionization spectroscopy (PTIS), and …

    uiuc Repository record

  2. Persistent photoconductivity and deep levels in aluminum gallium indium phosphide

    Plano, Mary AnneUniversity of Illinois at Urbana-Champaign2011

    The quaternary material aluminum gallium indium prosphide (($\rm Al\sb{x}Ga\sb{1-x})\sb{y}In\sb{1-y}P$) is used in the fabrication of visible lasers and light emitting diodes. There are problems in this material related to the observation of persistent photoconductivity at certain compositions. In …

    uiuc Repository record

  3. Low-temperature molecular beam epitaxy of gallium arsenide Antisite incorporation and Rheed oscillations: A theoretical study

    Krishnan, Natarajan

    … (LT) molecular beam epitaxy (MBE) of (100) gallium arsenide (GaAs). A comprehensive rate equation model is proposed based on the presence and dynamics of a physisorbed arsenic (PA) riding the growth surface which dictates the incorporation and concentration of antisites and the RHEED …

    unlv Repository record

  4. Design of Miniaturized On-Chip Passive Circuits in Silicon-Based Technology for 5G Communications

    Ge, Zeyu2021

    … different types of semiconductor process, namely gallium arsenide (GaAs), and silicon-based process, such as CMOS, and silicon germanium (SiGe). In this work, some fundamental design challenges, especially device miniaturization, will be fully addressed through some novel design methodologies. To …

    uts Repository record

  5. Near Field Scanning Optical Microscopy: Instrument Engineering and the Investigation of Porous Gallium Arsenide Structure-Property Relationships

    Knuckey, Christine MarieUniversity of Illinois at Urbana-Champaign2015

    … the structure-property relationships of porous gallium arsenide is reported. Novel porous gallium arsenide (GaAs) surfaces containing crystalline features were formed through an electrochemical corrosion process. Surface characterization techniques including XPS, AES and EDAX were utilized to …

    uiuc Repository record

  6. Silver (Ag) nanoparticle based masks for the development of antireflection subwavelength structures in GaAs and Si solar cells

    Moushumy, Nazme A.Edith Cowan University, Research Online, Perth, Western Australia2013

    … thicknesses are deposited on Silicon (Si) and Gallium Arsenide (GaAs) semiconductor substrates and annealed at different temperatures. Uniform nanoparticles with diameters around 200nm and spacing between nanoparticles as low as possible are our target as these parameters are suitable for the …

    edithcowan Repository record

  7. Effects of asymmetry on electron spin dynamics in gallium arsenide quantum wells

    Eldridge, Peter StephenUniversity of Southampton2009

    … optical studies of electron spin dynamics in gallium arsenide (GaAs) quantum wells, focusing on the effect of inversion asymmetric confinement potentials on spin lifetimes in quantum wells grown on (110)-oriented substrates. Inversion asymmetry in the presence of the spin orbit interaction …

    soton Repository record

  8. Photoconductivity and minority carrier lifetime in tin sulfide and gallium arsenide semiconductors for photovoltaics

    Lenahan, Frances DaggettMassachusetts Institute of Technology2016

    … the mobilitylifetime products ([mu][tau]) of gallium arsenide (GaAs) and annealed and un-annealed tin sulfide (SnS) with respective p-doping carrier concentrations of 1018 cm-3, 1016 cm-3, and 1015 cm-3 through photoconductivity measurements. Films are 1 [mu]m thick and have a four-bar and …

    mit Repository record

  9. Opportunities in Advanced Wireless Integrated Circuits

    Fareed, MoMassachusetts Institute of Technology2025

    … fast switching speeds, and improved efficiency. Gallium Nitride (GaN) has emerged as a leading candidate due to its superior electrical properties compared to traditional silicon (Si), silicon carbide (SiC), and gallium arsenide (GaAs). GaN’s high power density, thermal stability, and …

    mit Repository record

  10. Fabrication and Optimization of Single-Junction GaAs Thin Film Solar Cells on Epi-ready Flexible Metal Tapes for Low-cost Photovoltaics

    Khatiwada, DevendraUniversity of Houston2019

    … moisture and a low temperature coefficient make gallium arsenide (GaAs) more favorable than the ubiquitously-used silicon for solar cells. In spite of their high efficiency, GaAs solar cells have found limited use in various application due to high cost of the GaAs or Ge wafer used. In an …

    houston Repository record

  11. Toward ultra-broadband photoacoustic spectroscopy of supercooled liquids

    Manke, Kara JeanMassachusetts Institute of Technology2015

    … (SLs) composed of alternating layers of gallium arsenide (GaAs) and aluminum arsenide (AlAs) and multiple quantum well structures (MQW) of indium gallium nitride (InGaN) and gallium nitride (GaN) as photoacoustic transducers are presented. The results demonstrate that InGaN/GaN SLs can be …

    mit Repository record

  12. Spectroscopic characterisation of high dielectric constant materials on semiconducting surfaces

    McDonnell, StephenDublin City University2009

    … insulator/semiconductor interfaces on silicon, gallium arsenide (GaAs) and germanium have been studied by photoemission spectroscopy. Where possible, these interfaces were then tested electrically after the formation of capacitor structures. Each system presents its own unique challenges in the …

    dcu Repository record

  13. The design and thermal measurement of III-V integrated micro-coolers for thermal management of microwave devices

    Glover, JamesDe Montfort University2016

    … of the planar Gunn diode. To integrate the gallium arsenide (GaAs) based planar Gunn diode and micro-cooler, it was first necessary to design and fabricate individual GaAs based planar Gunn diodes and micro-coolers for thermal and electrical characterisation. To obtain very small area …

    de-montfort Repository record

  14. Sulfur Implanted GaSb for Non-Epitaxial Photovoltaic Devices

    Herrera, DanielVirginia Tech2019

    Gallium antimonide (GaSb) is a promising low-bandgap binary substrate for the fabrication of various infrared-based optoelectronic devices, particularly thermophotovoltaics (TPV). In order to make GaSb-based technologies like TPV more widely available, non-epitaxial dop- ing methods for GaSb must …

    vt Repository record

  15. Numerical Analysis and Optimal Design of Efficient Thin-Film Solar Cells with Novel Buffer Layers

    Ibliha, Mohamed HusseinUniversity of Missouri--Kansas City2015

    … Semiconducting materials like SiC, InP, InSb, GaAs, etc. have the properties to be used as buffer layer. For example Silicon Carbide (SiC) particularly in crystalline form deposited by atmospheric pressure chemical vapour deposition (APCVD) can match all those requirements and additionally fits …

    umkc Repository record

  16. Effects of ion processing and substrate variables on electrical characteristics of GaAs

    Sen, SidharthaVirginia Tech1991

    … information related to ionbeam-induced damage to gallium arsenide (GaAs). The study covers experimental results concerning defect creation in GaAs versus parameters such as implantation energy, nature of GaAs substrate, crystalline orientation, and annealing. Transport and deep level transient …

    vt Repository record

  17. Conjugated dithiols as model systems for molecular electronics: assembly, structure, and electrical response

    Kraptchetov, Dmitri A., 1982-The University of Texas at Austin2008

    … assemblies are disordered on both gold (Au) and gallium arsenide (GaAs) at all conditions explored. TPDT and QPDT adopt the most upright molecular orientations on both Au and GaAs when the assembly is carried out from EtOH-rich solutions at low NH4OH and high precursor concentrations. At these …

    texas Repository record

  18. Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise

    Masuda, Michael Curtis Meyer2014

    <p>Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike …

    calpoly Repository record

  19. Self-seeded II-V semiconductor nanowire growth by metal-organic chemical vapor deposition (MOCVD)

    Ermez, SemaMassachusetts Institute of Technology2016

    … binary III-V nanowire growth is demonstrated for gallium (Ga)-seeded gallium arsenide (GaAs) nanowires. High yield of vertical nanowires are grown reproducibly by a two-step approach: in situ deposition of Ga seed particles at high temperatures (500°C - 600°C), followed by GaAs nanowire growth at …

    mit Repository record

  20. Electroreflectance of gallium arsenide

    Pond, Stephen Fullerton2012

    "The electroreflectance spectrum of n-type gallium arsenide in the 1.2 - 5.3 eV photon energy range has been measured. The 6e l and 6e2 l1neshapes of six different critical points were analyzed in detail by fitting the one-electron Frapz-Keldysh-Aspnes theory to each separate critical point …

    uiuc Repository record

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