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Showing 1 to 4 of 4 for “"Gallium Antimonide (GaSb)"”.
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Characterization of Proton and Sulfur Implanted GaSb Photovoltaics and Materials
III-V compound Gallium Antimonide (GaSb), with a low bandgap of 0.72 eV at room temperature, is an attractive candidate for a variety of potential applications in optoelectronic devices. Ion implantation, among non-epitaxial methods, is a common and reliable doping technique to achieve local doping …
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Sulfur Implanted GaSb for Non-Epitaxial Photovoltaic Devices
Gallium antimonide (GaSb) is a promising low-bandgap binary substrate for the fabrication of various infrared-based optoelectronic devices, particularly thermophotovoltaics (TPV). In order to make GaSb-based technologies like TPV more widely available, non-epitaxial dop- ing methods for GaSb must …
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Novel analytical method for investigating compositional driven ion-induced nanopatterning of multicomponent materials
Ion-induced nanopatterning of GaSb produces hexagonally ordered nanopatterns with cone-shaped nanofeatures, where experimental investigations have shown that these nanopatterns form under a wide variety of ion parameters – including ion energy and ion species. Several theoretical works have …
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Electronic band structure of III-V quantum dots using tight-binding and the k.p approximation
… further in relation to nanostructured GaSb/GaAs systems. Effects on the observed type-I/type-II band alignment of such systems are explored by using cross-sectional STM images of GaSb nanostructures for composition input into a continuum model. Based on a rule-of-mixtures assumption …