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Showing 1 to 15 of 15 for “"Gallium Antimonide"”.
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Thermoelectric properties in gallium telluride-gallium antimonide vacancy compounds
Thermoelectric materials with high figure of merit, which requires large Seebeck coefficient, large electrical conductivity and low thermal conductivity, are of great importance in solid state cooling and power generation. Solid solution formation is one effective method to achieve low thermal …
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Crystal Growth and Electrical Properties of Sputtered Indium Gallium-Antimonide Thin Films
Made available in DSpace on 2014-12-14T16:00:39Z (GMT). No. of bitstreams: 1 7913445.pdf: 6050541 bytes, checksum: 01991b6d7235ee1d83a9efbedbcffe5d (MD5) Previous issue date: 1978
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The Properties of Indium Gallium Antimonide Thin Films Deposited by Multitarget Rf Sputtering
Made available in DSpace on 2014-12-14T16:00:40Z (GMT). No. of bitstreams: 1 7913651.pdf: 9875434 bytes, checksum: 2fc1678efef1e2e207007c07fcfd73ff (MD5) Previous issue date: 1978
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Crystal Growth, Phase Transformations, and Electrical Properties of Metastable Gallium Antimonide-Germanium Alloys
Single crystal metastable (GaSb)(,1-x)Ge(,x) alloys have been grown on GaAs substrates with compositions across the GaSb-Ge pseudobinary phase diagram. The alloys transformed to the equilibrium state through a continuous series of metastable states at a rate limited by diffusion. Ion bombardment …
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Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications
Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron …
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Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium-Arsenide, Indium-Phosphide, Indium-Arsenide, and Gallium-Antimonide (Semiconductors, Monte Carlo, Impact Ionization)
In this thesis, the high field behavior of both electrons and holes is studied using a Monte Carlo calculation including a complete band structure. The Monte Carlo method is particularly useful since it can be applied to both steady state and transient problems.
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A new beamline for positron annihilation lifetime spectroscopy
… in both crystalline and amorphous states. In gallium antimonide, positrons were used to probe void formation in swift heavy ion implantation at various fluences, leading to a better understanding of the transition between isolated channels and heavily porous states as the ion implantation …
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A new beamline for positron annihilation lifetime spectroscopy
… in both crystalline and amorphous states. In gallium antimonide, positrons were used to probe void formation in swift heavy ion implantation at various fluences, leading to a better understanding of the transition between isolated channels and heavily porous states as the ion implantation …
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Semi-conductor Core Optical Fibers and Fabrication Dependence of the Grain Structure
… silicon core, and a tellurium doped n-type gallium antimonide core. Characterization of the fibers was accomplished with energy dispersive spectroscopy (EDS) for compositional analysis, electron backscatter diffraction (EBSD) for crystal orientation and grain size, optical and electron …
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Mid-Wave and Long-Wave Single Uni-polar Barrier Infrared Detectors Based on Antimonide Material Systems
… technology known as type-II indium arsenide/gallium antimonide strain-layered superlattice has received much attention for its potential superior performance from lower dark current, mature III-V material fabrication techniques, and design versatility. However, superior dark current …
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Characterization of Proton and Sulfur Implanted GaSb Photovoltaics and Materials
III-V compound Gallium Antimonide (GaSb), with a low bandgap of 0.72 eV at room temperature, is an attractive candidate for a variety of potential applications in optoelectronic devices. Ion implantation, among non-epitaxial methods, is a common and reliable doping technique to achieve local doping …
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Sulfur Implanted GaSb for Non-Epitaxial Photovoltaic Devices
Gallium antimonide (GaSb) is a promising low-bandgap binary substrate for the fabrication of various infrared-based optoelectronic devices, particularly thermophotovoltaics (TPV). In order to make GaSb-based technologies like TPV more widely available, non-epitaxial dop- ing methods for GaSb must …
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Novel analytical method for investigating compositional driven ion-induced nanopatterning of multicomponent materials
Ion-induced nanopatterning of GaSb produces hexagonally ordered nanopatterns with cone-shaped nanofeatures, where experimental investigations have shown that these nanopatterns form under a wide variety of ion parameters – including ion energy and ion species. Several theoretical works have …
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Electronic band structure of III-V quantum dots using tight-binding and the k.p approximation
"Quantum dot nanostructures incorporate unique mechanical and electronic properties that dictate their use in numerous applications such as photovoltaics, LED's, and quantum computing. The \textbf{k}{$\cdot$}\textbf{p} approximation and O(N) moments based tight-binding model for electronic band …
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Large-scale molecular dynamics investigations of ion-induced compositional dynamics leading to nanopattern formation at semiconductor surfaces
Ion beam nanopatterning has been demonstrated to be a versatile method for obtaining a wide variety of surface features on a broad range of materials, with structures such as ripples, quantum dots, terraces, and ordered holes being obtained for various experimental conditions. However, theoretical …