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Showing 1 to 11 of 11 for “"Gainp"”.
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Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations).
… deals with the development of the monolithic GaInP/GaAs dual-junction solar cell for high concentration applications, including its theoretical analysis and modeling, and the experimental manufacture and characterization of the needed semiconductor structures grown by metal-organic vapour …
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High efficiency luminescent solar concentrator with interconnected gallium indium phosphide micro solar cells
… photons and the bandgap of semiconductors. GaInP is close to ideal in terms of bandgap in tandem with silicon. Due to its high cost of fabrication, the area of GaInP must be much smaller than Si in an economically viable GaInP//Si double-junction solar cell. A process of fabricating GaInP …
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Οπτικές Ιδιότητες Νανοσυρμάτων Ημιαγωγών για Φωτοβολταϊκές Εφαρμογές
… και τη βελτιστοποίηση συστοιχιών νανοσύρματων GaInP/InP σε υπόστρωμα, υπό ηλιακή ακτινοβολία, υπολογίζοντας την πυκνότητα ρεύματος βραχυκύκλωσης και την τάση ανοικτού κυκλώματος, λαμβάνοντας υπόψιν ρεαλιστικές οπτικές σταθερές των υλικών. Οι υπολογισμοί γίνονται με τη μέθοδο στρωματικής …
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Untersuchung von Ladungstransfermechanismen an Galliumarsenid- und Indiumphosphid-Elektrolyt-Grenzflächen mittels Impedanz- und phasensensitiver Photostrom-Spektroskopie
… untersucht. An den Kontakten von GaAs, InP und GaInP mit Ferrocen oder Cobaltocen in Acetonitril wurden dabei Elektrochemische Impendanzspektren (EIS) und Intensitätsmodulierte Photostromspektren (IMPS) aufgenommen sowie Strom-Spannungs- und Kapazitätsmessungen durchgeführt. Die Ergebnisse der …
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Células solares de GaAs de concentración basadas en estructuras avanzadas crecidas por LPE
… contacto, y las células de GaAs con ventana de GaInP y sin capa de contacto. Por otro lado, se investiga la configuración n/p GaAs con ventana de AlGaAs y con capa de contacto. La estructura de célula solar p/n GaAs con ventana de AlGaAs y sin capa de contacto ha ofrecido el mejor resultado, …
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Design and analysis of solar cells by coupled electrical - optical simulation
… cell, the single nanowire solar cell, and the GaInP/GaAs tandem solar cell are investigated. For solar cell characterization, this work examines the validity of the reciprocity theorem and quantitative lifetime parameter extraction using Time-Resolved Photoluminescence (TRPL) and …
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Generalized detailed balance theory of solar cells
… of crystalline silicon, Cu(In,Ga)Se2 and GaInP/GaInAs/Ge triple cells were carried out and interpreted with the help of the reciprocity theorem. In case of crystalline silicon, the focus was on the investigation of recombination and light trapping with spectrally and spatially resolved EL. …
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Desarrollo de la tecnología de MOVPE para el crecimiento de semiconductores III-V : fabricación de células solares para concentraciones luminosas elevadas
… utilizados a lo largo de la tesis: GaAs, AlGaAs, GaInP y AlInP. Para ello, se ha analizado cómo influyen las condiciones del proceso epitaxial en la velocidad de crecimiento y la concentración de portadores y, en el caso de los ternarios, en su composición. Una vez analizados los resultados, el …
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Design and growth of wide-bandgap III-V solar cells on silicon by molecular beam epitaxy
Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-03-28 without embargo terms