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Showing 1 to 10 of 10 for “"Gaasp"”.
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GaAsP/InGaP heterojunction bipolar transistors for III-V on Si microelectronics
… mismatch with Si. In this thesis, we study GaAsP/InGaP heterojunction bipolar transistors (HBTs) grown via MOCVD as a test-bed for III-V microelectronics integration with Si. Epitaxial challenges involving growth of GaAsP/InGaP HBT structures on Si substrates were addressed. Heavy C p-type …
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Integration of GaAsP alloys on Si for high-efficiency Ill-V/Si PV
Introduction: The motivation of this work is to create a platform that leverages the large area and low cost of Silicon wafers with the high performance of Ill-V materials. Ill-V semiconductor materials have enabled a host of electronic devices from record setting solar cells, high efficiency light …
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Integration of GaAsP alloys on SiGe virtual substrates for Si-based dual-junction solar cells
… on a system level. Integration of GaAsP alloys on Si substrates would enable the creation of high efficiency dual-junction solar cells on low cost and light weight Si wafers and would also enable a path for yellow and green light emission devices on a Si platform. Our work focused …
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Tradeoffs of the use of SiGe buffer layers in tandem GaAsP/Si solar cells
… a tandem cell on Si can be achieved by using a GaAsP (Eg=1.7 eV) as the top cell. Out of several possible integration routes, the use of a linearly graded SiGe buffer as interfacial layer between the two cells potentially yields the highest quality for the epitaxial GaAsP layer, an essential …
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Investigation of the electrical characteristics of GaAsP light-emitting diodes (LED's) under conditions of mechanical stress
The main line pursued is the mechanical stressing of light-emitting diodes (LED's) by pressing on the surface with spherically rounded sapphire probes ranging from 100 μm to 500 1m radius of curvature and with forces up to 50 grams weight on the largest probe, care being taken not to exceed the …
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Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices
… Tensile relaxed gallium arsenide phosphide (GaAsP) graded layers yield virtual substrates with extremely low threading defect densities ([rho]t=104cm-2), while extremely thin, 1.3[mu]m compressively graded GaAsP buffers also yield low thread densities ([rho]t=105cm-2). The lack of phase …
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Self-seeded II-V semiconductor nanowire growth by metal-organic chemical vapor deposition (MOCVD)
… to lattice mismatch between GaAs substrate and GaAsP nanowires can be released due to nanowire geometry. Cathodoluminescence measurements have shown emission of light in GaAsP band gap energies, confirming the successful growth of nanowires in this ternary material system. The methods developed …
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Nanoscale quantification of stress and strain in III-V semiconducting nanostructures
… electron mobility transistor structures and GaAs/GaAsP core-shell nanowires grown by a particle-mediated vapor-liquid-solid mechanism. By comparing our experimental results to strain fields calculated by finite element analysis, we show that these techniques can provide quantitative strain …
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Design and growth of wide-bandgap III-V solar cells on silicon by molecular beam epitaxy
Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-03-28 without embargo terms
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Growth and characterization of gallium arsenide phosphide and gallium phosphide on silicon for III-V/Si multi-junction solar cells
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-08-01