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Showing 1 to 7 of 7 for “"Gaasbi"”.
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Investigation of carrier dynamics in InN, InGaN, and GaAsBi by optical pump-probe techniques /
… of carrier dynamics in InN, InGaN, and GaAsBi heterostructures by using light-induced transient gratings and differential transmission techniques. The experimental studies in a wide range of excess carrier densities and temperatures revealed that trap-assisted Auger recombination is the …
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Tolimosios infraraudonosios srities optoelektronikos įtaisų žemo dažnio triukšmo charakteristikos /
III-V group semiconductor lasers, including GaAsBi (Gallium Arsenide Bismide) and AlGaAs (Aluminum Gallium Arsenide) lasers, are highly valued for their applications in telecommunications, medical technologies, and consumer electronics. AlGaAs lasers are known for their efficiency and stability in …
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III-V Bismide Optoelectronic Devices
… achieve higher effiency. In the development of GaAsBi/GaAs temperature-insensitve optoelectronic devices, laser diodes have not been realized due to the lack of separate confinement heterostructures, which is bottlenecked by the difficulty of growing high quality AlGaAs barrier layers at low …
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Transmission electron microscopy analysis of novel iii-v nanostructures with sb and bi for optoelectronic applications
… during the growth of the QDs and secondly as a GaAsBi capping layer after growth. According to the results obtained in chapter 5, at high temperatures (510 °C) Bi acts mainly as a surfactant, controlling the diffusion of In during the growth process. This led to the formation of coherent and …
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Avances y limitaciones de la técnica de microscopia electrónica de transmisión-barrido con detección de electrones a alto ángulo para el análisis de nuevos nanomateriales con aplicaciones en eficiencia energética.
… con arquitectura multiunión, y en sistemas GaAsBi-GaAs para dispositivos fotónicos estables a la temperatura que operan en la región del infrarrojo medio. Adicionalmente, se consideran materiales poliméricos reforzados con grafeno que garantizan la reducción del peso de las aeronaves a la …
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Synthesis and Properties of GaAs1-xBix Prepared by Molecular Beam Epitaxy
<p>GaAs1-xBix is a III-V semiconductor alloy which has generated much fundamental scientific interest. In addition, the alloy possesses numerous device-relevant beneficial characteristics. However, the synthesis of this material is very challenging and its properties are not well understood. The …
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Computational modeling of transport and growth-related processes of novel gallium-v materials for temperature-resilient and high-power electronics
Recently, there has been significant interest in exploring the potential in novel Ga-V materials for temperature-resilient and power electronics applications. These materials are based on mature and well-studied semiconductors, like GaAs and GaN, and there is untapped potential in utilizing …