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Showing 1 to 2 of 2 for “"GaN-on-diamond"”.
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Near junction thermal management of GaN HEMTs via wafer bonding
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore …
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Characterization of Diamond-Semiconductor Interfaces
The extremely high thermal conductivity of diamond thin films makes them an ideal candidate for heat spreaders that can be integrated with electronic devices. By more effectively dissipating the heat generated during operation device dimensions can be shrunk increasing yield, performance losses due …