Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 23 for “"GaN transistors"”.
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Modelling of Multichannel GaN Transistors
… Nitride High Electron Mobility Transistor (GaN HEMT) is the representative GaN-based wide bandgap semiconductor device. It has been one of the most promising research topics due to its excellent electronic properties in high power, high frequency and high temperature applications. The …
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Self-aligned AlGaN/GaN transistors for sub-mm wave applications
… work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source and drain access resistance. The eventual fabrication of self-aligned transistors required …
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Gate Driver for Phase Leg of Parallel Enhancement-Mode Gallium-Nitride (GaN) Transistors
… rating and broader application, Gallium nitride (GaN) is a promising next-generation power switch. The current four GaN HEMTs in paralleled phase leg that can block 400 V and conduct 200 A current is very beneficial, thus making the protection method on a GaN phase leg an urgent topic. This thesis …
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AlGaN/GaN-based power semiconductor switches
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers …
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Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
Gallium Nitride (GaN) belongs to a class of materials called wide band-gap semiconductors. In recent years, the versatile nature of this material has been exploited for a wide range of applications from solid state lighting to RF and microwave communication, as well as high power switching. The …
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Design/System Technology Co-optimization of Gallium Nitride High Electron Mobility Transistors for Next-G 3DIC Heterogeneous Integration of Gallium Nitride and Si CMOS
… use of mmWave and subterahertz RF front ends and transistors. Gallium Nitride (GaN) transistors have continued to push the limits of high-power density, high frequency semiconductor devices. The future of GaN radio frequency (RF) circuit technology is at the intersection of device engineering, …
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High Frequency, High Power Density GaN-Based 3D Integrated POL Modules
… its theoretical limits. The recently emerged GaN transistors as a possible candidate to replace silicon devices in various power conversion applications. GaN devices are high electron mobility transistors (HEMT) and have higher band-gap, higher electron mobility, and higher electron velocity …
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Electric field engineering in GaN high electron mobility transistors
In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase the frequency to mm-wave frequencies. The goal of this thesis has been to …
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Differential power processing for series-stacked processors
… in a ladder SC DPP converter, implemented with GaN transistors. Excellent 5 V regulation of each embedded computer is demonstrated in a 4-series-stack configuration, with realistic computational workloads. Moreover, we demonstrate hot-swapping of individual computers with maintained voltage …
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Analysis and design of high power density resonant switched-capacitor converters
… to achieve zero current switching of all transistors, which allows for high switching frequency and high conversion efficiency. A split-phase control scheme is used in order to eliminate the current transients associated with the Dickson SC converter and the resultant power loss. Employing …
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Enabling miniaturized grid-interface power conversion
… high voltages for application of emerging GaN transistors, wide range of operating voltages and powers, and a twice-line-frequency energy storage component that is difficult to miniaturize. This thesis will present a high-frequency inductor structure with greatly improved density, an …
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Compact and efficient power electronics with applications to solar PV, automotive, and aerospace systems
… usage of high device switching frequency, fast GaN transistors, and careful thermal management.
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Degradation study of AIGaN/GaN HEMT through electro-thermo-mechanical calculations and thermo-reflectance measurements
During the last few years, AIGaN/GaN high electron mobility transistors (HEMTs) have been intensively studied for high frequency high power applications. In spite of this great interest, device reliability is still an important challenge for the wide deployment of AIGaN/GaN HEMT technology. To …
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Modeling of gallium nitride transistors for high power and high temperature applications
Wide bandgap (WBG) semiconductors such as GaN and SiC are emerging as promising alternatives to Si for new generation of high efficiency power devices. GaN has attracted a lot of attention recently because of its superior material properties leading to potential realization of power transistors for …
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Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics
… performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. One of the key challenges is to improve its high frequency characteristics. In this thesis, we …
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Probing local thermal, mechanical, and optical properties utilizing dynamic cantilever response in contact mode atomic force microscopy
… inverse-piezoelectric deformation of biased AlGaN/GaN transistors. Deformation measurements during device heating reveal shifts in the thermomechanical strain fields within devices as bias conditions change. Deformation measurements without heating reveal bias dependence of …
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Developing an active, high-heat-flux thermal management strategy for power electronics via jumping-droplet phase-change cooling
… single and multiple high-power gallium nitride (GaN) transistors acting as local hot spots (4.6 mm x 2.6 mm). An externally powered circuit was developed to direct jumping droplets from a copper oxide (CuO) nanostructured superhydrophobic surface to the transistor hot spots by applying electric …
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Dynamic ON-resistance in high voltage GaN field-effect-transistors
… Si-based power electronics system being matured, GaN Field-Effect-Transistors have emerged as a disruptive technology with great potential that arises from the outstanding material properties of GaN. However, in spite of great progress in GaN device fabrication, electrical reliability and a number …
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p-Channel gallium nitride transistor on Si substrate
… to the development of high speed and high power GaN based n-channel transistors (mostly in the form of AlGaN/GaN High Electron Mobility Transistors). However, the full potential of GaN technology cannot be reached without the existence of p-channel GaN transistors. These devices are required for …
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GaN heterojunction FET device Fabrication, Characterization and Modeling
… processing, and modeling technologies for GaN-based Heterojunction Field Effect Transistors (HFETs). The interest in investigating GaN HFETs is motivated by the advantageous material properties of nitride semiconductor such as large band gap, large breakdown voltage, and high saturation …
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