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Showing 1 to 12 of 12 for “"GaN transistor"”.
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p-Channel gallium nitride transistor on Si substrate
… to the development of high speed and high power GaN based n-channel transistors (mostly in the form of AlGaN/GaN High Electron Mobility Transistors). However, the full potential of GaN technology cannot be reached without the existence of p-channel GaN transistors. These devices are required for …
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Static and Dynamic Characterization of Silicon Carbide and Gallium Nitride Power Semiconductors
… for power electronics applications are SiC and GaN devices. This paper focuses on the newest devices emerging that are made with these wide-bandgap materials. The static and dynamic characterization of six different SiC MOSFETs from different manufacturers are presented. The static …
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GaN Electronics for High-Temperature Applications
… rise to high-performance (room temperature) transistors for RF, power, MEMS, and mixed-signal applications. Previous works on high-temperature (HT) electronics have been typically limited to two aspects, namely, the high-temperature robustness of discrete transistors and basic circuit …
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High Frequency, High Power Density Integrated Point of Load and Bus Converters
… frequency for improved power density is limited. GaN transistors are high electron mobility transistors offering a higher band gap, electron mobility, and electron velocity than Si devices. These material characteristics make the GaN device more suitable for higher frequency and voltage operation. …
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Gallium nitride class-F power amplifier for UMTSWCDMA applications
… of 2.14 GHz and bandwidth of 5 MHz using GaN transistor. The amplifier has been simulated using a high frequency circuit simulator namely, the Agilent Advanced Design System (ADS). The simulated results have shown a Power Added Efficiency (PAE) of 76.8% for an optimum input power of 30 …
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Developing an active, high-heat-flux thermal management strategy for power electronics via jumping-droplet phase-change cooling
… single and multiple high-power gallium nitride (GaN) transistors acting as local hot spots (4.6 mm x 2.6 mm). An externally powered circuit was developed to direct jumping droplets from a copper oxide (CuO) nanostructured superhydrophobic surface to the transistor hot spots by applying electric …
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Opportunities in Advanced Wireless Integrated Circuits
… and improved efficiency. Gallium Nitride (GaN) has emerged as a leading candidate due to its superior electrical properties compared to traditional silicon (Si), silicon carbide (SiC), and gallium arsenide (GaAs). GaN’s high power density, thermal stability, and high-frequency operation …
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GaN Complementary-Metal-Oxide-Semiconductor (CMOS) Technology
… invention of blue-LED is the efficient doping of GaN with p-type dopants. For years p-GaN has been used only in optoelectronic devices such as LEDs and LASERs. In this thesis we demonstrate how p-GaN can be used to realize the next generation of efficient RF and power electronics. Apart from being …
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Modeling of devices for gallium-nitride-based integrated photonics
… since silicon (Si),"" gallium nitride (GaN) has received a tremendous amount of attention during the past two decades due to its superb material properties. While the wide band gap and high electron saturation velocity make it especially suitable for high-power and high-frequency …
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A High Temperature RF Front-End of a Transceiver for High Speed Downhole Communications
… designed and prototyped using Gallium Nitride (GaN) high electron mobility transistor (HEMT) devices. Measurement results of the transceiver's front end are reported in this dissertation. To our knowledge, this is the first RF transceiver that operates at this high temperature. Third, …
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Conception et réalisation des bobines PCB à base de matériau magnétique souple pour des convertisseurs HF
L'arrivée sur le marché des transistors au Nitrure de Gallium (GaN) permet l'augmentation de la fréquence de commutation des convertisseurs statiques. La conséquence directe est la réduction des dimensions des composants passifs et l'augmentation de la densité de puissance des convertisseurs. Les …