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Showing 1 to 18 of 18 for “"GaN technology"”.
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Galvanic isolation interface and gate driver for power switching systems in GaN technology [Interfaccia di isolamento galvanico e gate driver per sistemi di commutazione di potenza in tecnologia GaN]
… Innovation Action), progetto n. 101007310 — GaN4AP, e dalla Commissione Europea attraverso il progetto ASCENT+: Accesso alle Infrastrutture Europee per la Nanoelettronica, finanziato nell’ambito del programma H2020, Grant 871130. Questa tesi presenta progetti innovativi per applicazioni di …
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Linearity Enhancement of High Power GaN HEMT Amplifier Circuits
Gallium Nitride (GaN) technology is capable of very high power levels but suffers from high non-linearity. With the advent of 5G technologies, high linearity is in greater demand due to complex modulation schemes and crowded RF (Radio Frequency) spectrum. Because of the non-linearity issue, GaN …
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A flying capacitor multilevel dual-active bridge converter for interfacing high voltage in more-electric aircraft
… alternative that enables use of medium-voltage GaN technology, reduced magnetics volume, and improved theoretical efficiency across its operating range. The 6-level FCML-DAB converter is explored in this work, with a 700:28 V prototype achieving a peak efficiency of 93.75%.
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Thermally Hardened RF GaN HEMTs in Extreme Environments
… gas/oil drilling, among others. Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are especially well suited for high temperature electronic applications due to their low intrinsic carrier concentration and excellent electrical properties. Despite great progress in HT GaN …
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A High Temperature Wideband Power Amplifier for a Downhole Communication System
… operating at an ambient temperature of 230oC. GaN technology was chosen primarily due to its ability to function at a high junction temperature. The proposed PA was designed with Qorvo's T2G6003028-FL HEMT as it operates reliably at a high junction temperature (T_J) and also the package offers …
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Design and integration of hybrid and monolithic microwave power amplifiers for wideband applications using gallium nitride technology
… GHz with high efficiency using gallium nitride (GaN) technology. The studied architectures are based on the reactive/resistive matching approach and the traveling wave technique in both hybrid and monolithic microwave integrated circuits (MMICs). Important details of design development and …
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GaN Electronics for High-Temperature Applications
… offer a strong indication of the potential of GaN transistor technology for HT applications, the development of HT (500 °C) GaN-ICs is still at its early stage due to the low degree of complexity and integration demonstrated so far. Major challenges in the realization of GaN HT-robust …
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Gallium nitride MEMS resonators
… and saturation velocities, Gallium Nitride (GaN) has been increasingly used in high-power, high-frequency electronics and monolithic microwave integrated circuits (MMICs). At the same time, GaN also has excellent electromechanical properties, such as high acoustic velocities and low elastic …
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Design and Control of a Compact 7.2 kW GaN-Based Bidirectional Isolated On-Board Charger (OBC)
… and hardware designs by incorporating high power GaN switches that substantially improve OBC performance and compactness. The thesis introduces three major contributions: First, a novel Zero Crossing Voltage Control (ZCVC) strategy for Power Factor Correction (PFC) applications is developed. This …
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MOCVD nitridinių p-i-n struktūrų formavimas spinduliuotės jutikliams /
Gallium nitride (GaN) is a promising material for next generation electronic and photonic devices. GaN has a wide direct bandgap (3,4 eV) which is tunable from infrared to ultraviolet spectrum by mixing nitride with additional group III elements. Its superior material properties such as high …
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Opportunities in Advanced Wireless Integrated Circuits
… and improved efficiency. Gallium Nitride (GaN) has emerged as a leading candidate due to its superior electrical properties compared to traditional silicon (Si), silicon carbide (SiC), and gallium arsenide (GaAs). GaN’s high power density, thermal stability, and high-frequency operation …
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p-Channel gallium nitride transistor on Si substrate
… to the development of high speed and high power GaN based n-channel transistors (mostly in the form of AlGaN/GaN High Electron Mobility Transistors). However, the full potential of GaN technology cannot be reached without the existence of p-channel GaN transistors. These devices are required for …
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Design of Novel Devices and Circuits for Electrostatic Discharge Protection Applications in Advanced Semiconductor Technologies
… and verified for the first time for the emerging GaN technology. For the SCR, no matter what modification is going to be made, the first concern when drawing the layout is to determine the layout geometrical style, finger width and finger number. This problem for diode and MOS device were studied …
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Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
GaN Metal Insulator Semiconductor High Electron Mobility Transistors (GaN MIS-HEMTs) show excellent promise as high voltage power transistors that can operate efficiently at high temperatures and frequencies. However, current GaN technology faces several obstacles, one of which is Time-Dependent …
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Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design
… high electron mobility transistor (HEMTs) technology is increasingly finding space in high voltage (HV) and high frequency (HF) circuit application domains. The superior breakdown electric field, high electron mobility, and high temperature performance of GaN HEMTs are the key factors for …
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Integrated Tunable LC Higher-Order Microwave Filters for Interference Mitigation
… implemented in Silicon Germanium (SiGe) BiCMOS technology. Along with center frequency tuning, the filter achieves first ever reported 3-dB bandwidth tuning from 2% to 25%, representing 120 MHz to 1.5 GHz of bandwidth at 6 GHz. A new set of design equations were developed for the 4th-order …
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High Frequency, High Power Density GaN-Based 3D Integrated POL Modules
… its theoretical limits. The recently emerged GaN transistors as a possible candidate to replace silicon devices in various power conversion applications. GaN devices are high electron mobility transistors (HEMT) and have higher band-gap, higher electron mobility, and higher electron velocity …
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Package-scale galvanically isolated systems for data transfer [Sistemi di isolamento galvanico package-scale per trasferimento dati]
… un canale isolato di controllo in tecnologia GaN per applicazioni gate-drive. Il collegamento isolato è stato fabbricato e caratterizzato mostrando un basso consumo di potenza pur mantenendo prestazioni allo stato dell’arte.