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Showing 1 to 17 of 17 for “"GaN power devices"”.
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Trap modelling and injection effects in GaN power devices
GaN power devices are promising candidates for the next generation of high efficiency power semiconductor devices. Their material and device properties enable power conversion systems that are potentially smaller, lighter, less complex, cheaper and more efficient than silicon based solutions. While …
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GaN-based vertical power devices
Power electronics based on Gallium Nitride (GaN) is expected to significantly reduce the losses in power conversion circuits and increase the power density. This makes GaN devices very exciting candidates for next-generation power electronics, for the applications in electric vehicles, data …
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Novel Structures for Scalable Vertical Gallium Nitride Power Devices
Solid state electronic devices have been the backbone of modern power systems for decades. However, as we enter an era fuelled by renewable energy and defined by pervasive electrification, novel power devices must be developed to address the increasingly stringent demands for high power density and …
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… mixed-conduction gallium nitride (GaN) diodes with reverse blocking voltage approaching parallel-plane behavior. Although GaN is a promising wide bandgap (WBG) material, experimentally reported GaN power devices result in large leakage currents with lower reverse blocking …
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Gallium Nitride Power Electronics using Machine Learning
Gallium Nitride (GaN) power devices have the potential to jump-start the next generation of power converters which are smaller, faster, denser, and cheaper. They are thus expected to meet the increasing 21st Century need for power density and efficiency, while at the same time reducing pollution. …
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Junction Based Gallium Nitride Power Devices
Power electronics plays an important role in many energy conversion applications in modern society including consumer electronics, data centers, electric vehicles, and power grids, etc. The key components of power electronic circuits are power semiconductor devices including diodes and transistors, …
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Development of gallium nitride power transistors
GaN-based high-voltage transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. This thesis describes a new process technology for the fabrication of GaN power devices optimized for their use in efficient power distribution systems in …
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Investigation of a GaN-Based Power Supply Topology Utilizing Solid State Transformer for Low Power Applications
<p>Gallium nitride (GaN) power devices exhibit a much lower gate capacitance for a similar on-resistance than its silicon counterparts, making it highly desirable for high-frequency operation in switching converters, which leads to their significant benefits on power density, cost, and system …
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Experimental Evaluation of Medium-Voltage Cascode Gallium Nitride (GaN) Devices for Bidirectional DC–DC Converters
… significant role in ensuring uninterrupted power supply and in supporting the reliability and stability of microgrid operations. Power electronics, especially bidirectional DC–DC converters, are essential parts in distributed energy storage and alternative energy systems because of their …
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Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance …
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Modeling of gallium nitride transistors for high power and high temperature applications
Wide bandgap (WBG) semiconductors such as GaN and SiC are emerging as promising alternatives to Si for new generation of high efficiency power devices. GaN has attracted a lot of attention recently because of its superior material properties leading to potential realization of power transistors for …
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Robustness and Stability of Gallium Nitride Transistors in Dynamic Power Switching
Wide-bandgap gallium nitride (GaN) high electron mobility transistors (HEMTs) are gaining increased adoption in applications like mobile electronics and data centers. Benefitting from the high channel mobility and the high breakdown field of GaN, GaN power HEMTs enable low specific on-resistance …
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Wide Bandwidth Control Electronics For Gan-Based Pebbs
… or dedicated hardware. A novel technology, Power Hardware in the Loop (PHIL), extends the capability and improves the methodology of HIL by allowing natural coupling between the connections of the simulation and the hardware. The key elements of the PHIL technology is the simulation/hardware …
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Highly Efficient Gan-Based Single-Phase Transformer-Less Pv Grid-Tied Inverter
… of a PV system that needs to be improved is the power converter. Grid-tied transformer-less inverters have gained a lot of interest in recent years because of their higher efficiency, reduced volume and lower cost compared to traditional line transformer inverters.</p> <p>This dissertation …
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High Frequency, High Current 3D Integrated Point-of-Load Module
… products. Today, almost every microprocessor is powered by a multi-phase POL converter with high output current, which is also known as voltage regulator (VR). In the state-of-the-art VRs, the circuits are mostly constructed with discrete components and situated on the motherboard, where it can …
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Robustness of Gallium Nitride Power Devices
Power device robustness refers to the device capability of withstanding abnormal events in power electronics applications, which is one of the key device capabilities that are desired in numerous applications. While the current robustness test methods and qualification standards are developed …