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Showing 1 to 3 of 3 for “"GaN power amplifiers"”.
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Behavioral Model and Predistortion Algorithm to Mitigate Interpulse Instabilities Induced by Gallium Nitride Power Amplifiers in Multifunction Radars
The incorporation of Gallium Nitride (GaN) Power Amplifiers (PAs) into future high power aperture radar systems is certain; however, the introduction of this technology into multifunction radar systems will present new challenges to radar engineers. This dissertation describes a broad investigation …
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Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design
… mobility, and high temperature performance of GaN HEMTs are the key factors for its use as HV switches in converters and active components of RF-power amplifiers. Designing circuits in both application regimes requires accurate compact device models that are grounded in physics and can describe …
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Linearity Enhancement of High Power GaN HEMT Amplifier Circuits
Gallium Nitride (GaN) technology is capable of very high power levels but suffers from high non-linearity. With the advent of 5G technologies, high linearity is in greater demand due to complex modulation schemes and crowded RF (Radio Frequency) spectrum. Because of the non-linearity issue, GaN …