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Showing 1 to 8 of 8 for “"GaN on SiC"”.
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Design of a High Temperature GaN-Based VCO for Downhole Communications
… demand for substantial real-time data transmission, the need for high speed electronics able to operating in harsher ambient environment is quickly on the rise. This paper presents a high temperature VCO for downhole communication system. The proposed VCO is designed and prototyped using 0.25 μm …
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A High Temperature Wideband Low Noise Amplifier
As the oil industry continues to drill deeper to reach new wells, electronics are being required to operate at extreme pressures and temperatures. Coupled with substantial real-time data targets, the need for robust high speed electronics is quickly on the rise. This paper presents a high …
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High Temperature Microwave Frequency Voltage-Controlled Oscillator
As the oil and gas industry continues to explore higher temperature environments, electronics that operate at those temperatures without additional cooling become critical. Additionally, current communications systems cannot support the higher data-rates being offered by advancements in sensor …
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Near junction thermal management of GaN HEMTs via wafer bonding
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore …
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Design of a High Temperature GaN-Based Variable Gain Amplifier for Downhole Communications
… 210 °C. The need for high temperature operation, combined with the need for real-time data logging has created a growing demand for robust, high temperature RF electronics. This thesis presents the design of an intermediate frequency (IF) variable gain amplifier (VGA) for downhole …
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Reliability of GaN high electron mobility transistors on silicon substrates
GaN High Electron Mobility Transistors are promising devices for high power and high frequency applications such as cellular base stations, radar and wireless network systems, due to the high bandgap and high breakdown field of GaN. However, their reliability is the main hindrance to the deployment …
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Dynamic ON-resistance in high voltage GaN field-effect-transistors
… power management systems has received considerable interest due to its potential to realize significant energy savings for the world. With current Si-based power electronics system being matured, GaN Field-Effect-Transistors have emerged as a disruptive technology with great potential …