Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 13 of 13 for “"GaN films"”.
-
CAFM Studies of Epitaxial Lateral Overgrowth GaN Films
… conductiveAFM (CAFM) to study defect sites on GaN films. In particular, these defect sites demonstrate current leakage under reverse-bias conditions that are detrimental to device fabrication. Two growth techniques that were used to improve this leakage behavior for samples in this study …
-
AFM and C-AFM Studies of GaN Films
… to study the conduction properties of n-type GaN films. A total of 16 samples were examined and grouped according to their surface morphologies and conduction behaviors. The most common type of surface morpliology was that of Ga-rich samples having undulating "hillocks" with interspersed …
-
The Effect of Growth Method on GaN Films and Their Interfaces with CdTe and CdS
This work has analyzed the complex interfaces of GaN and InGaN grown by sputter deposition and GaN grown by metal-organic chemical vapor deposition (MOCVD) with CdTe and CdS. First, the GaN and InGaN films were characterized by AFM and XRD, and it has been shown that the MOCVD samples have a very …
-
Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg-Doped GaN Films Grown by PAMBE
Mg-doped GaN films grown at different temperatures are investigated. It is found that the growth conditions to achieve p-type films are closely related to those for undoped films since p-type conductivity is obtained only after a complete compensation of the background carriers. By supplying a high …
-
A Critical Study of Gallium Nitride-Based Digital Technology
… sets were fabricated. Keys to the fabrication of GaN BGJFETs may be the device-quality material and the stable fabrication technology as well as the masks. The difficulties and achievements in the growth of n-GaN and p-GaN films by plasma-assisted molecular beam epitaxy (PAMBE) were discussed. The …
-
Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization
For the growth of n-type films, a specific ammonia flow rate (or V/III ratio if Ga flux is fixed) was required to obtain films with high electron Hall mobility. X-ray diffraction (XRD), photoluminescence (PL), cross-sectional transmission microscopy (XTEM) and deep level transient spectroscopy …
-
Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy
… a comprehensive study on the development of GaN-based power electronic devices. The hands-on research on GaN compound semiconductors includes thin film growth, material characterization, device fabrication, and device characterization using state-of-the-art semiconductor processing equipment …
-
Porous Gallium Nitride Generated by Electroless Etching: Morphology, Optical Properties, and Sensing Applications
… several possible applications for porous GaN have been explored. Currently, because there is not a route for the growth of bulk GaN, GaN films must be grown heteroepitaxially. Substrates for GaN growth are not ideal, and introduce strain and defects. Porous GaN has been studied as an …
-
Strain relaxation mechanism of semiconductor thin films
… of the thesis is a study of III-nitride thin films grown on sapphire (0001) substrate with molecular beam epitaxy. Irradiation experiments were also performed to investigate whether strain relaxation takes place in SiGe films and GaN films to look for indications of metastability.
-
Multi-scale modelling of III-nitrides: from dislocations to the electronic structure
… density reduction during the growth of thick GaN films. The second part of this thesis employs first principles techniques (iv) to investigate the electronic structure of binary compounds (GaN, AlN, InN) and correlate these with experimentally available N K-edge electron energy loss near edge …
-
Growth kinetics and doping of gallium nitride grown by rf-plasma assisted molecular beam epitaxy
A reduced rate for growth of GaN by plasma-assisted molecular beam epitaxy often limits growth to temperatures less than 750°C, with the reduction significantly larger than thermal decomposition rates. Conditions producing a flux consisting predominantly of either atomic nitrogen or nitrogen …
-
Electrical characterisation of defects in wide bandgap semiconductors.
… materials (polycrystalline diamond and GaN) which have both recently attracted a great deal of attention because of their potential applications in the fields of power electronics and optoelectronics. Raman spectroscopy, I-V and C-V measurements were carried out as supporting experiments …
-
Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes
… such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and diamond has increased due to their ability to deliver high power, high switching frequency and low loss electronic devices for power conversion applications. To meet these requirements, semiconductor material …